International Business Machines Corporation

Jeffrey Louis Hurd

Cyprian Emeka Uzoh

Daniel C Edelstein

Kenneth Parker Rodbell

Panayotis Constantinou Andricacos

Chao-Kun Hu

Wilma Jean Horkans

John Owen Dukovic

Kwong-Hon Wong

Hariklia Deligianni

Harikilia Deligianni

A process is described for the fabrication of submicron interconnect structures for integrated circuit chips. Void-free and seamless conductors are obtained by electroplating Cu from baths that contain additives and are conventionally used to deposit level, bright, ductile, and low-stress Cu metal. The capability of this method to superfill features without leaving voids or seams is unique and superior to that of other deposition approaches. The electromigration resistance of structures making use of CU electroplated in this manner is superior to the electromigration resistance of AlCu structures or structures fabricated using Cu deposited by methods other than electroplating.

Electroplated interconnection structures on integrated circuit chips

A process is described for the fabrication of submicron interconnect structures for integrated circuit chips. Void-free and seamless conductors are obtained by electroplating Cu from baths that contain additives and are conventionally used to deposit level, bright, ductile, and low-stress Cu metal. The capability of this method to superfill features without leaving voids or seams is unique and superior to that of other deposition approaches. The electromigration resistance of structures making use of Cu electroplated in this manner is superior to the electromigration resistance of AlCu structures or structures fabricated using Cu deposited by methods other than electroplating.

Method of making electroplated interconnection structures on integrated circuit chips

Growing community of inventors

Marlboro, NY, United States of America

Jeffrey Louis Hurd