Texas Instruments Corporation

Jeffrey Loewecke

James David Bernstein

Jiejie Xu

Lance Stanford Robertson

Said Ghneim

Duofeng Yue

James B Friedmann

Yuqing Xu

Thomas Patrick Conroy

Sean M Collins

James D Vaughan

Kaneez E-shaher Banu

The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles () to a substrate (), the beam of charged particles () having a given beam divergence; and forming a diverged beam of charged particles () by subjecting the beam of charged particles () to an energy field (), thereby causing the beam of charged particles () to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles () into the substrate ().

Divergent charged particle implantation for improved transistor symmetry

Methods () are described for calibrating the implantation angle of an ion implanter utilized in the manufacture of semiconductor products. One method () includes implanting () phosphorous ions into a pilot wafer held by a wafer platen held at a starting implantation angle in the ion implanter. The phosphorous implantation into a p-doped substrate of the pilot or blank wafer, for example, forms a semiconductive sheet. The method () then includes changing the implantation angle (), and implanting another wafer () with phosphorous ions. The angle changing () and implanting () of other wafers continues in this manner until all wafers or angles are implanted () as desired. The phosphorous implanted wafers are then measured () with a four-point probe, for example, to obtain the sheet resistance of all the implanted wafers. The difference between the sheet resistances of the wafers at each corresponding implant angle is then obtained () to determine a functional relationship between the sheet resistance and the implantation angle. Finally, the functional relationship is then used to calibrate () the implantation angle of the implanter. For example, the lowest sheet resistance of the functional relationship may be determined, the relationship normalized to the lowest sheet resistance, then a zero degree implantation angle of the implanter is calibrated to to coincide with the lowest sheet resistance measurement.

Method for implanter angle verification and calibration

The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles () to a substrate (), the beam of charged particles () having a given beam divergence, and forming a diverged beam of charged particles () by subjecting the beam of charged particles () to an energy field (), thereby causing the beam of charged particles () to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles () into the substrate ().

The present invention provides a method for implanting a dopant in a substrate and a method for manufacturing a semiconductor device. The method for implanting a dopant, among other steps, including tilting a substrate () located on or over an implant platen () about an axis in a first direction with respect to an implant source () and implanting a portion of an implant dose within the substrate () tilted in the first direction. The method further includes tilting the substrate () having already been tilted in the first direction about the axis in a second opposite direction, and implanting at least a portion of the implant dose within the substrate () tilted in the second opposite direction.

Method for implanting dopants within a substrate by tilting the substrate relative to the implant source

The present invention provides a method for placing a dopant in a substrate and a method for manufacturing an integrated circuit. The method for placing a dopant in a substrate, among other steps, includes providing a substrate () and implanting a dopant within the substrate () using an implant (), the implant () moving at varying speeds across the substrate () to provide different concentrations of the dopant within the substrate ().

Method for varying the uniformity of a dopant as it is placed in a substrate by varying the speed of the implant across the substrate

The present invention provides a method for manufacturing semiconductor devices, a method for manufacturing an integrated circuit, and a method for improving a drive current for semiconductor devices on a wafer-by-wafer basis. The method for manufacturing semiconductor devices, among other elements, includes patterning gate structures on a substrate (), each of the gate structures having a profile associated therewith, and obtaining information representative of the profiles of the gate structures (). In accordance with the present invention the information may then be fed forward to alter a manufacturing parameter associated with a drive current of the semiconductor devices ().

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Wylie, TX, United States of America

Jeffrey Loewecke