General Electric Company

Momentive Performance Materials Gmbh

Jeffrey Lennartz

Ajit Sane

Thomas E Devan

Arthur Moore

John T Mariner

Wei Fan

Jon Leist

Douglas Alan Longworth

Timothy J Hejl

Tae Won Kim

Andrew John Macey

Thomas Devan

A wafer processing apparatus is fabricated by depositing a film electrode onto the surface of a base substrate, the structure is then overcoated with a protective coating film layer comprising at least one of a nitride, carbide, carbonitride or oxynitride of elements selected from a group consisting of B, Al, Si, Ga, refractory hard metals, transition metals, and combinations thereof. The film electrode has a coefficient of thermal expansion (CTE) that closely matches the CTE of the underlying base substrate layer as well as the CTE of the protective coating layer.

Etch resistant wafer processing apparatus and method for producing the same

A wafer processing device or apparatus, i.e., a heater or an electrostatic chuck, comprises a planar support platen, a support shaft having centrally located bore, and a pair of electrical conductors located in the shaft. In one embodiment, the electrical conductors are concentrically located within the bore of the shaft, with the first electrical lead being in the form of a pyrolytic graphite rod and separated from the outer second graphite electrical lead by means of a pyrolytic boron nitride (pBN) coating. In a second embodiment, the support platen and the support shaft are formed from a single unitary body of graphite. In yet another embodiment of the device of the invention, the connection posts comprise a carbon fiber composite and the exposed ends of the electrical connectors are coated with a protective ceramic paste for extended life in operations.

Wafer handling apparatus and method of manufacturing thereof

A method of forming a pyrolytic boron nitride (PBN) article and an article having layers of PBN separated by layers of PBN having a dopant of sufficient concentration to induce peeling, the steps of introducing vapors of ammonia and a gaseous boron halide in a suitable ratio into a heated furnace reactor to cause boron nitride to be deposited in layers on a substrate, with at least one gaseous dopant injected into furnace at controlled periodic interval(s) such that at least two selected layers of boron nitride are doped with said gaseous dopant(s) at a minimum average concentration of 0.1 atomic wt % at a depth ranging from 1000 to 2000 angstroms in each selected layer, and with the selected layers spaced apart about 0.1 micron to 100 microns.

Pyrolytic boron nitride crucible and method

A method of forming a pyrolytic boron nitride (PBN) article and an article having layers of PBN separated by layers of PBN having a dopant of sufficient concentration to induce peeling, the steps of introducing vapors of ammonia and a gaseous boron halide in a suitable ratio into a heated furnace reactor to cause boron nitride to be deposited in layers on a substrate, with at least one gaseous dopant injected into furnace at controlled periodic interval(s) such that at least two selected layers of boron nitride are doped with said gaseous dopant(s) at a minimum average concentration of 2 atomic wt % at a depth ranging from 1000 to 2000 angstroms in each selected layer, and with the selected layers spaced apart about 0.1 micron to 100 microns apart.

Growing community of inventors

Cleveland, OH, United States of America

Jeffrey Lennartz