Alliance for Sustainable Energy, LLC

University of Denver

Jeffrey Lee Blackburn

Andrew John Ferguson

Azure Dee Avery

Rachelle Rosemarie Ihly

Ji Hao

Kai Zhu

Lance Michael Wheeler

Matthew C Beard

Mengjin Yang

Haipeng Lu

Anne-Marie Dowgiallo

Elisa Margaret Link

Hanyu Zhang

Noah James Stanton

Barry Lee Zink

Eric Edward Benson

Taylor Christie Julia Aubry-Komin

The present disclosure relates to a composition that includes a first layer having a first molecule that includes a metal and a halogen, a second layer that includes the first molecule, and a third layer that includes a chiral molecule, where the third layer is positioned between the first layer and the second layer, and the first layer, the second layer, and the third layer form a crystalline structure.

Chiral heterostructures

Methods for determining desired doping conditions for a semiconducting single-walled carbon nanotube (s-SWCNT) are provided. One exemplary method includes doping each of a plurality of s-SWCNT networks under a respective set of doping conditions; determining a thermoelectric (TE) power factor as a function of a fractional bleach of an absorption spectrum for the plurality of s-SWCNT networks doped under the respective sets of doping conditions; and using the function to identify one of the TE power factors within a range of the fractional bleach of the absorption spectrum. The identified TE power factor corresponds to the desired doping conditions.

Methods of preparing single-walled carbon nanotube networks

The present disclosure relates to a composition that includes a film having a network of randomly aligned carbon nanotubes, where the carbon nanotubes have an average diameter between about 0.6 nm and about 2.0 nm and the carbon nanotubes form bundles having an average diameter between about 3 nm and about 50 nm. In addition, the composition is characterized by a power factor &#x3b1;&#x3c3; between 1 &#x3bc;W/mKand about 3500 &#x3bc;W/mKand by ZT=&#x3b1;&#x3c3;T/k between about 0.02 and about 2.0 over a temperature range between about 100 K and about 500 K.

Compositions having reduced thermal conductivities and methods of making the same

The present disclosure relates to a device that includes a perovskite nanocrystal (NC) layer, a charge separating layer, an insulating layer, a gate electrode, a cathode, and an anode, where the charge separating layer is positioned between the perovskite NC layer and the insulating layer, the insulating layer is positioned between the charge separating layer and the gate electrode, and the cathode and the anode both electrically contact the charge separating layer and the insulating layer. In some embodiments of the present disclosure, the device may be configured to operate as at least one of a photodetector, an optical switching device, and/or a neuromorphic switching device.

Nanostructured devices having perovskite nanocrystal layer for photodetection, optical memory, and neuromorphic functionality

The present disclosure relates to a device that includes an active layer and a first charge transport layer, where the first charge transport layer includes a first layer and a second layer, the first layer is in contact with the second layer, the second layer is positioned between the first layer and the active layer, the first layer comprises a first carbon nanostructure, and the second layer includes a second carbon nanostructure.

Multilayer carbon nanotube film-containing devices

The present disclosure relates to a composition that includes a metal chalcogenide having a surface and a ligand, where the ligand is covalently bound to the surface. In some embodiments of the present disclosure, the metal chalcogenide may be defined by MX, where Z is between 1 and 3, inclusively, M (a metal) includes at least one of Sc, Zr, Hf, Zr, Ti, Nb, Ta, V, Mo, Cr, Re, W, S, Pt, Fe, Cu, Sb, In, Zn, Cd, P, and/or Mn, and X (a chalcogenide) includes at least one of S, Se, and/or Te.

Functionalized metal chalcogenides of partially it crystalline phase

Described herein is a device that includes an alkyl ammonium metal halide perovskite layer, and a nanostructured semiconductor layer in physical contact with the alkyl ammonium metal halide perovskite layer. The alkyl ammonium metal halide perovskite layer may include methyl ammonium cations. The alkyl ammonium metal halide perovskite layer may include anions of at least one of chlorine, bromine, astatine, and/or iodine. The alkyl ammonium metal halide perovskite layer may include cations of a metal in a 2+ valence state. The metal may include at least one of lead, tin, and/or germanium.

Growing community of inventors

Golden, CO, United States of America

Jeffrey Lee Blackburn