Raytheon Company

Raytheon Bbn Technologies Corp.

Jeffrey Laroche

Thomas E Kazior

Kelly P Ip

Moe Soltani

Eduardo M Chumbes

Jason C Soric

Katherine J Herrick

Miroslav Micovic

Teresa J Clement

Adam E Peczalski

Karen Kaneko Baker

Christopher Carbonneau

An Array Core Block for an AESA includes a stack of 2*M alternating N-channel RFIC and MMIC Power Amplifier wafers bonded together by a wafer-scale direct bond hybrid (DBH) interconnect process. This process forms both metal-to-metal and dielectric hydrogen bonds between bonding surfaces to seal the wafer stack. Each array core block includes an array of through substrate metal vias to distribute DC bias, LO and information signals. Each array core block also includes a cooling system including micro-channels formed on a backside of at least one of the chips in each bonded pair and through substrate via holes formed through the stack that operatively couple the micro-channels for all of the bonded pairs to receive and circulate a fluid through the micro-channels and through substrate via holes to cool the RFIC and MMIC Power Amplifier chips and to extract the heated fluid.

Wafer-scale direct bonded array core block for an active electronically steerable array (AESA)

Embodiments of a single-chip ScAIN tunable filter bank include a plurality of switching elements, and a plurality of channel filters integrated on a monolithic platform. The monolithic platform may comprise a single crystal base and each of the switching elements may comprise at least one of a scandium aluminum nitride (ScAIN) or other Group III-Nitride transistor structure fabricated on the single crystal base. In these embodiments, each channel filter comprises a multi-layered ScAIN structure comprising one or more a single-crystal epitaxial ScAIN layers fabricated on the single crystal base. The ScAIN layers for each channel filter may be based on desired frequency characteristics of an associated one of the RF channels.

Tunable monolithic group III-nitride filter banks

An electro-optical modulator assembly including a transistor including a gate, a drain, and a source disposed on a substrate, a photonic modulator including a first waveguide structure positioned between a first electrode and a second electrode, the photonic modulator being integrated with the transistor on the substrate, and a metal connection coupled between the drain of the transistor and one of the first and second electrodes of the photonic modulator.

Integration of electronics with lithium niobate photonics

Integration of electronics with Lithium Niobate photonics

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Andover, MA, United States of America

Jeffrey Laroche