Texas Instruments Corporation

Jeffrey L Large

Michael Lee Dawson

Mary Coles

Edward J Pryor, Iii

Henry Litzmann Edwards

Ayman A Fayed

Neeraj P Nayak

Oguz Altun

Kah Mun Low

Chris Barr

Patrick Cruise

A method includes attaching a first portion of a preformed metal micro-wire to a multilayer structure. The preformed metal micro-wire has a diameter of 10 microns or less. The method also includes attaching a second portion of the preformed metal micro-wire to the multilayer structure.

Ex-situ manufacture of metal micro-wires and FIB placement in IC circuits

An integrated circuit package includes a first conductive element that is fabricated as part of the integrated circuit package and a micro-wire having a first end coupled to the first conductive element. The micro-wire has been fabricated ex-situ and is of a metal having a diameter of 10 microns or less.

An integrated circuit (IC) includes a substrate having a device layer and a plurality of metal layers formed thereon. The plurality of metal layers include patterned upper metal layers and lower metal layers, a multi-level metal interconnect structure formed using the plurality of metal layers, where the interconnect structure is in electrical contact with a first portion and second portion of the device layer. At least one circuit editing structure including a first and second columns are formed using at least a portion of the plurality of metal layers, the first column being in electrical contact with the first portion of the device layer and the second column being in electrical contact with second portion of the device layer, where a portion of the first and second columns define a circuit editing feature operable to electrically couple or decouple the columns using focused ion beam (FIB) processing.

Mask design elements to aid circuit editing and mask redesign

A laminar flow vacuum chuck (10) has a plurality of vacuum ports (20, 52) disposed near the center of the chuck. A plurality of interconnected grooves (22, 24, 26, 26, 30, 32, 34, 36, 38, 40, 42, 44, 46, 50, 62, 64) extend from the vacuum ports (20, 52) to the perimeter 14. By reason of the shape of the interconnected grooves and the location of the vacuum ports, the downward force on a wafer supported by the chuck increases as the wafer size increases.

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Richardson, TX, United States of America

Jeffrey L Large