International Business Machines Corporation

Other

Jeffrey L Blouse

Bernard S Meyerson

Karen A Nummy

Robert Rosenberg

Martin Revitz

Russell C Lange

Inge G Fulton

Jeffrey P Gambino

Louis L Hsu

Jack Oon Chu

David Edward Kotecki

Seshadri Subbanna

Brian Cunningham

Zu-Jean Tien

A method of manufacturing a bipolar transistor by use of low temperature emitter process is disclosed. After completion of the usual base and collector formation in a vertical bipolar transistor, an emitter opening is etched in the insulator layer over the base layer at selected locations. A thin layer (less than 500 .ANG.) of in-situ doped amorphous silicon is deposited over the substrate and heated to densify for 30 to 60 minutes at about 650.degree. C. Subsequently an in-situ doped polysilicon layer of 100 to 200 nm is deposited over the amorphous Si film preferably at about 600.degree. C. Subsequently the layers are heated below 600.degree. C. for several hours to convert partially the amorphous Si into a monocrystalline emitter layer over the base regions.

Low temperature emitter process for high performance bipolar devices

There is provided a method for use in the fabrication of a transistor, the method including the steps of: providing a substrate of semiconductor material including a region of first conductivity type; forming a first layer of second conductivity type epitaxial semiconductor material over the region; forming a second layer of second conductivity type epitaxial semiconductor material over the first layer, the second layer of a relatively higher dopant concentration than the first layer; oxidizing a portion of the second layer; and removing the oxidized portion of the second layer to expose a portion of the first layer, the exposed portion of the first layer forming an intrinsic base region. The steps of forming the first and second layers are preferably performed using low temperature, ultra-high vacuum, epitaxial deposition processes.

Narrow base transistor and method of fabricating same

Method of fabricating a narrow base transistor

Growing community of inventors

Stanfordville, NY, United States of America

Jeffrey L Blouse