Asml Holding N.v.

Jeffrey John Lombardo

Gerrit Johannes Nijmeijer

Igor Matheus Petronella Aarts

Ronald Peter Albright

Victor Antonio Perez-Falcon

Andrew Judge

Daniel Leslie Hall

Piotr Jan Meyer

Junqiang Zhou

Methods and systems are described for reducing particulate contaminants on a clamping face of a clamping structure in a lithographic system. A substrate such as a cleaning reticle is pressed against the clamping face. A temperature differential is established between the substrate and the clamping face either before or after clamping occurs to facilitate transfer of particles from the clamping face to the substrate.

Apparatus for and method of in-situ particle removal in a lithography apparatus

An alignment mark for determining a two-dimensional alignment position of a substrate is discussed. The alignment mark includes an array of patterns. The array of patterns includes a first set of patterns and a second set of patterns arranged. The first set of patterns is arranged in a first sequence along a first direction. The second set of patterns is arranged in a second sequence along the first direction. The second sequence is different from the first sequence. Each pattern of the array of patterns is different from other patterns of the array of patterns that are adjacent to the each pattern.

Alignment mark for two-dimensional alignment in an alignment system

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Roxbury, CT, United States of America

Jeffrey John Lombardo