Raytheon Company

Agere Systems Inc.

Jeffrey H Saunders

Mohammad Shafiul Mobin

Lane Allen Smith

Michael G Adlerstein

Eduardo M Chumbes

Denpol Kultran

Shahed Reza

Andrew Michael Wilds

Richard D Young

Mark E Stading

James P Moffatt

Carl N Tenenbaum

Mark T Richardson

Julie N Strickland

George W Gerace

A heterojunction semiconductor field effect transistor HFET having a pair of layers of different semiconductor materials forming a quantum well within the structure to support the 2DEG. Source, drain and gate electrodes are disposed above the channel. The HFET has a predetermined transconductance. A transconductance control electrode varies an electric field within the structure under the channel to vary the shape of the quantum well and thereby the transconductance of the FET in accordance with a variable control signal fed to the transconductance control electrode.

Heterojunction field effect transistor (HFET) variable gain amplifier having variable transconductance

Embodiments of a drain modulator that uses high power switch sensing to control active pulldown are generally described herein. In some embodiments, a logic and sense module is arranged to receive a control signal for controlling an on and an off state of an input of a switch to turn a high power voltage at an output of the switch on and off. A pullup module and a pulldown module are coupled to the input of the switch. An active pulldown module coupled to the output of the switch. The logic and sense module monitors the input to the switch and activates the active pulldown module to drain the output of the switch to a zero voltage when the input of the switch transitions to the off state.

High speed, high efficiency, high power RF pulse modulating integrated switch

A flat panel active electronically scanned array (AESA) () includes heterogeneous integrated circuit DC-DC voltage converters () periodically placed on array elements (). A heterogeneous integrated circuit () includes a voltage converter () configured to receive an input voltage (V), and to convert the input voltage to an output voltage (V) that is different from the input voltage, the voltage converter () comprising an analog and/or digital PWM circuit (). The heterogeneous integrated circuit () also includes a feedback circuit () configured to receive the output voltage (V), and to generate a control signal used to vary a pulse width of a PWM signal generated by the analog and/or digital PWM circuit (). The digital PWM circuit () is implemented in a heterogeneous integrated circuit () fabricated on a common substrate () using CMOS and GaN fabrication processes.

Distributed power conditioning with DC-DC converters implemented in heterogeneous integrated circuit

A single monolithic integrated circuit () containing a solar cell (or cells) with a DC-DC converter includes: a substrate (); the solar cell () or a solar cell array (') on the substrate for generating an output voltage; and the DC-DC converter () integrated on the substrate for receiving the output voltage to generate a converted voltage, which may be higher or lower than the solar generated voltage. The substrate may be a silicon &#x3c;111&#x3e;, silicon carbide, or sapphire substrate. A GaN RF power amplifier and a CMOS controller including PWM modulator may also be monolithically integrated with an InGaN solar cell array and a GaN DC-DC converter. GaN switches () may be used to couple InGaN solar cells () in series or parallel within the solar cell array (&#x2032;) to yield improved or optimal voltage and current levels as required by the load.

Monolithic InGaN solar cell power generation with integrated efficient switching DC-DC voltage convertor

An apparatus includes a headset having one or more speaker units. Each speaker unit is configured to provide audio signals to an operator. Each speaker unit includes an ear cuff configured to contact the operator's head. The headset further includes multiple sensors configured to measure one or more characteristics associated with the operator. At least one of the sensors is embedded within at least one ear cuff of at least one speaker unit. The sensors could include an electrocardiography electrode, a skin conductivity probe, pulse oximetry light emitting diodes and photodetectors, an accelerometer, a gyroscope, or a temperature sensor. The apparatus could also include a processing unit configured to analyze audio signals captured by a microphone unit of the headset to identify respiration by the operator or at least one voice characteristic of the operator.

Apparatus for monitoring the condition of an operator and related system and method

A monolithic integrated circuit (IC) chip containing a plurality of transistors, including: a substrate; a first transistor on the substrate; and a second transistor integrally formed on the substrate with the first transistor, the second transistor having a different structure than the first transistor, wherein the first transistor includes a first material system and the second transistor includes a second material system different from the first material system. The monolithic IC chip may further include a third transistor integrally formed on the substrate with the first and second transistors. The first transistor may include gallium nitride (GaN) and the second and third transistors may include silicon carbide (SiC).

Monolithic integrated circuit chip integrating multiple devices

A pre-distorter that compensates for amplitude and phase distortion created by an amplifier. During a training session, the amplifier is stimulated with input signals of pre-selected amplitude and phase at various temperatures and the amplifier output is captured and converted into data sets. Polynomials are then fitted to the data sets and inverses of the polynomials are determined. The coefficients of the inverse polynomials are then saved for each temperature. During operation, the amplifier temperature is predicted based on the amplifier input signal and the coefficients associated with the predicted temperature are selected to be applied to the input signal to compensate for amplitude and phase distortion caused by the amplifier.

Method and apparatus for performing digital pre-distortion

A predistorter is disclosed that predistorts an input signal based on one or more static coefficients that are representative of a non-linear distortion characteristic of an amplifier. The input signal is also processed based on a non-linear gain parameter that reduces an error metric between the input signal and a feedback signal. The nonlinear gain parameter adapts an amount of nonlinearity introduced by the predistorter. The non-linear gain adaptation is performed, for example, when the input voltage is above a threshold input voltage. The input signal can be processed by multiplying the input signal by the non-linear gain parameter followed by table-coefficient processing, or by both multiplying the input by the non-linear gain parameter followed by dividing the table-coefficient processed output signal by the same non-linear gain parameter. The input signal can also be processed based on a feedback gain parameter that compensates for a small-signal gain of the feedback loop. The feedback gain parameter attempts to maintain a small-signal gain of approximately unity.

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Andover, MA, United States of America

Jeffrey H Saunders