Moxtek, Inc.

Fairchild Semiconductor Corporation

Jeffrey H Rice

R Stewart Nielson

Bradley R Williams

Daniel Bacon-Brown

Benjamin Downard

Michael Black

Jim Pierce

Qi Wang

Minhua Li

A reflective wire grid polarizer (WGP) can include an array of wireson a face of a substrate, with channelsbetween adjacent wires. The wirescan have certain characteristics for WGP performance, such as index of refraction, alternating high/low index continuous thin films, thickness of layer(s), duty cycle, reflective rib shape, a curved side of transparent ribsor, aspect ratio, or combinations thereof.

Reflective wire grid polarizer with shaped ribs

Reflective wire grid polarizer with transparent cap

Processes used to transfer semiconductor structures from an initial substrate to a base substrate include bonding the initial substrate with a silicon dioxide layer to a doped silicon structure weakened sufficiently by hydrogen implantation for cleaving. After cleaving, a doped silicon layer remains, burying the silicon dioxide layer between the doped silicon layer and the initial substrate. Semiconductor structures are formed within/on an epitaxial layer disposed on the doped silicon layer forming an intermediate semiconductor structure. A process handle is temporarily bonded to the semiconductor structures for support. The initial substrate is thinned and removed by a mechanical thinning process followed by chemical etching using the buried silicon dioxide layer as an etch stop. The silicon dioxide layer is chemically removed from the doped silicon layer. A base substrate is formed on the doped silicon layer. The process handle is removed leaving the semiconductor structures disposed on the base substrate.

Semiconductor structures formed on substrates and methods of manufacturing the same

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South Jordan, UT, United States of America

Jeffrey H Rice