Qorvo Us, Inc.

Jeffrey Gengler

Nikolaus Klemmer

Frederick L Martin

Gangadhar Burra

Bror Peterson

Jose Jimenez

Rached Hajjii

Amin Shahverdi

Elias Reese

Mark Briffa

A power amplifier with a quasi-static drain voltage adjustment is provided that has a transistor that is made from Gallium Nitride (GaN). In an exemplary aspect, the transistor is a field-effect transistor (FET) having a source, gate, and drain. The transistor is tested for process variations. Based on detected process variations, a microcontroller may raise a drain voltage to increase output power capability. Power capability of the power amplifier scales as the square of the drain voltage, so small adjustments are sufficient to offset the slow process corner while maintaining reliability.

Power amplifier with quasi-static drain voltage adjustment

A radio frequency (RF) control circuit is provided. The RF control circuit includes power amplifier (PA) circuitry for amplifying an RF signal and control circuitry configured to improve linearity of the PA circuitry based on a PA signature(s) already available and utilized to perform digital pre-distortion (DPD) in the RF control circuit. In examples discussed herein, the control circuitry determines a performance deviation of the PA circuitry based on the PA signature and continuously adjusts a bias voltage(s) supplied to the PA circuitry until the performance deviation is reduced to a predetermined performance deviation threshold. By continuously monitoring the performance deviation based on the PA signature(s) and adjusting the bias voltage(s), the control circuitry can detect and correct an operation abnormality of the PA circuitry in a timely manner. As a result, it is possible to maintain linearity in the PA circuitry for enhanced PA performance.

Radio frequency control circuit

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McKinney, TX, United States of America

Jeffrey Gengler