Intersil Corporation

Jeffrey Edward Lauffer

Jeffrey P Spindler

Raymond T Ford

Stephen C Ahrens

William R Morcom

Thomas E Grebs

Joseph L Cumbo

Rodney Sylvester Ridley, Sr

A semiconductor device includes a source region and a gate disposed at the upper surface of a silicon substrate, which includes a drain region for the device. On the lower surface of the substrate is disposed a backmetal drain terminal comprising a stack that includes a first layer of tantalum and an outermost second layer of copper.

Backmetal drain terminal with low stress and thermal resistance

A silicon wafer 2 has an ultra thin central portion 2 that is supported by a circumferential rim 3 of thicker silicon. The central region is thinned by conventional means using conventional removal apparatus. As an alternative method, the central portion is removed using a photoresist mask or a combination of a photoresist mask and a hard mask.

Self-supported ultra thin silicon wafer process

Growing community of inventors

Mountaintop, PA, United States of America

Jeffrey Edward Lauffer