Varian Semiconductor Equipment Associates, Inc.

Applied Materials, Inc.

Jeffrey E Krampert

Richard John Hertel

John Robert Fairhurst

Roger Bradford Fish

Ernest Everett Allen

Jonathan David Fischer

Richard S Muka

Jay R Wallace

Shurong Liang

Alexander C Kontos

Tyler Burton Rockwell

Ernest E Allen

Edward D MacIntosh

Michael A Schrameyer

Adam Calkins

Kevin T Ryan

Todd MacEachern

Joseph Dzengeleski

A processing system including an ion source having a plasma chamber to house a plasma, an extraction assembly, disposed along a side of the plasma chamber, and including at least one extraction aperture, and an antenna assembly extending through the plasma chamber. The antenna assembly may include a dielectric enclosure and a plurality of conductive antennas extending through the dielectric enclosure, the conductive antennas having respective gas ports formed therein for delivering a gas into the dielectric enclosure. The processing system may further include a temperature regulation system coupled to the conductive antennas and to the dielectric enclosure for monitoring a temperature of the dielectric enclosure and regulating the gas delivered to the conductive antennas for regulating the temperature of the dielectric enclosure.

Active temperature control for RF window in immersed antenna source

A system that reduces the amount of water that enters a process chamber via a movable shaft is disclosed. The surface of the shaft is made hydrophobic. Any water droplets that are collected on the hydrophobic shaft are disposed at a high contact angle, making it more likely that these water droplets fall from the shaft. Further, any water that enters the process chamber is more readily removed from the shaft due to the lower energy of liberation. Reducing the amount of water in a process chamber may improve the lifetime of the components in the process chamber and may improve the yield of the workpieces being processed. This may be especially relevant when process gasses that contain halogens are employed.

Hydrophobic shafts for use in process chambers

An ion source chamber with an embedded heater is disclosed. The heater comprises a radiant heater, such as a heat lamp or light emitting diodes, and is disposed within the ion source chamber. The radiant heat from the heater warms the interior surfaces of the ion source chamber. Further, the ion source chamber is designed such that the plasma is generated in a portion of the ion source chamber that does not contain the heater. Additionally, a controller may be in communication with the heater so as to maintain the ion source chamber at a desired temperature when a plasma is not being generated in the ion source chamber.

Ion source chamber with embedded heater

A gas injection system, including an extraction plate having an extraction aperture for allowing passage of an ion beam through the extraction plate, the extraction plate further having a gas slot for expulsion of a residue removal gas from the extraction plate. The gas injection system may include a gas conduit extending through the extraction plate between the gas slot and a gas manifold, a gas source connected in fluid communication with the gas manifold, the gas source containing the residue removal gas. The gas manifold may include a valve adjustable between a first position, wherein the residue removal gas is allowed to flow into the extraction plate, and a second portion, wherein the residue removal gas can be vented from the extraction plate. The gas injection system may further include a manifold cover coupled to the gas manifold.

Gas injection system for ion beam device

A system and method are disclosed for holding and cooling substrates during processing. A substrate clamp has an engagement portion for engaging a substrate about the inside diameter as well as a portion of the substrate surface immediately adjacent to the inside diameter. The clamp has a retracted position which enables the engagement portion to fit through the substrate ID, and an expanded position which enables the engagement portion to engage the substrate ID and the substrate surface immediately adjacent to the inside diameter. The clamp can include a conformal coating to enhance engagement between the substrate and the engagement portion. The clamp can also include an energy absorbing coating on one or more surfaces to maximize the absorption of radiative energy emitted from the substrate. Other embodiments are described and claimed.

Method and apparatus for clamping and cooling a substrate for ion implantation

A low pressure temperature sensor for measuring the temperature of a substrate during semiconductor device manufacturing is generally described. Various embodiments describe a gas chamber having an opening disposed within a dielectric plate of a platen with a seal disposed around the opening in the gas chamber such that the opening in the gas chamber may be sealed against the substrate. Furthermore, a temperature sensor and a spring are disposed in the gas chamber, the spring biased to place the temperature sensor in contact with the substrate. Additionally, a gas source configured to pressurize the gas chamber with a low pressure gas in order to increase thermal conductivity between the substrate and the temperature sensor is provided.

Gas coupled probe for substrate temperature measurement

A substrate carrier includes a carrier plate, a cover plate and a plurality of substrate support slots. The carrier plate has recesses for receiving substrates. A sidewall of each recess includes protrusions for engaging the OD of a substrate. The cover plate is rotatable and has a cam on an undersurface. The cam is enagageable with a lateral slot in each of a plurality of substrate supports of the carrier plate. Rotating the cover plate causes the cam to move the substrate supports, one by one, so a substrate engaging end of the substrate support moves away from an associated substrate recess. A substrate is loaded into the recess, whereupon the cover plate is rotated further so the cam disengages from the lateral slot. The substrate supports are biased to engage the OD of the substrate to lock the substrate within the recess. Other embodiments are described and claimed.

Method and apparatus for holding a plurality of substrates for processing

An improved system and method of measuring the temperature of a workpiece in a processing chamber is disclosed. Because silicon has very low emissivity in the infrared band, a coating is disposed on at least a portion of the workpiece. This coating may be graphite or any other material that can be readily applied, and has a relatively constant emissivity over temperature in the infrared spectrum. In one embodiment, a coating of graphite is applied to a portion of the workpiece, allowing the temperature of the workpiece to be measured by observing the temperature of the coating. This technique can be used to calibrate a processing chamber, validate operating conditions within the processing chamber, or to develop a manufacturing process.

Technique for temperature measurement and calibration of semiconductor workpieces using infrared

A ceramic fastener includes a ceramic body portion, and a containment layer disposed around the ceramic body portion. The containment layer retains pieces of the ceramic body portion when the ceramic body portion is subjected to a torque sufficient to fracture the ceramic body portion. The fastener can be a nut, and the containment layer can be disposed around one or more of the top, bottom and side surfaces of the nut. The containment layer can be a metal shroud having a thickness from 0.01 to 0.125 inches. The ceramic body portion can be alumina or zirconia. A thread insert may be disposed within a fastener bore of the ceramic body portion.

Contained ceramic fastener

A system and method are disclosed for removing vertically oriented substrates from a cassette. A lifter includes a lifter notch and a stabilizer notch for holding a substrate. The lifter notch engages and lifts the substrate along the substrate ID, while the stabilizer notch captures the substrate OD to prevent lateral movement of the substrate during lifting. In use, the cassette is tilted to bias all substrates to one side and ensure consistent spacing. The lifter moves up into the cassette until the notches are adjacent, but beneath, the ID and OD of a substrate. The lifter is moved laterally to position the notches directly below the ID and OD. Upward movement of the lifter causes the lifter notch to lift the substrate along the ID. The lifter continues upward with the substrate until the substrate clears the top of the cassette. Other embodiments are described and claimed.

Method and apparatus for removing a vertically-oriented substrate from a cassette

A system and method are disclosed for removing horizontally oriented substrates from a cassette. A substrate lifter has an engagement end for engaging a substrate and an adjustment end for engaging an adjustment assembly. The engagement end includes a recess having first and second arcuate sidewalls configured to engage an OD of the substrate, and a circular protrusion positioned between the first and second arcuate sidewalls. The circular protrusion allows lateral movement of the substrate up to a predetermined amount and prevents lateral movement of the substrate in excess of the predetermined amount. Other embodiments are described and claimed.

Method and apparatus for lifting a horizontally-oriented substrate from a cassette

A device is disclosed for manipulating a substrate having an inside diameter (ID). The device includes a handle, a trigger that slides within the handle, an alignment shaft and a plurality of substrate supports having distal ends. A plurality of substrate support actuators are connected to the trigger. The trigger can move the plurality of substrate supports between a substrate engaging position and a substrate releasing position through selective engagement of the plurality of substrate supports by the plurality of substrate support actuators. In the substrate engaging position the distal ends of the substrate supports move radially outward to engage the ID of the substrate, enabling the device to hold the substrate without touching the substrate faces. Other embodiments are described and claimed.

Method and apparatus for manipulating a substrate

A vacuum assembly used for warming processed substrates above the dew point to prevent unwanted moisture on the processed substrate surfaces as well as reducing negative impact on manufacturing throughput. The vacuum assembly includes a processing chamber, a substrate handling robot, and a heater which may be an optical heater. The processing chamber is configured to cryogenically process one or more substrates. The transfer chamber is connected to the processing chamber and houses the substrate handling robot. The substrate handling robot is configured to displace one or more substrates from the processing chamber to the transfer chamber. The heater is connected to the transfer chamber above the substrate handling robot such that the heater emits energy incident on the substrate when the substrate handling robot displaces the substrate in the transfer chamber.

In vacuum optical wafer heater for cryogenic processing

In an ion implanter, one or more optical heaters are disposed above a pair of support arms. The support arms have an engaged positioned which is disposed beneath a platen and a retractable position displaced vertically away from the platen and rotated away from the platen in a direction parallel to a planar surface thereof. When the support arms are in the retracted position, the one or more optical heaters is configured to provide optical energy incident on surfaces of the cooling pads disposed on the support arms for removal of unwanted materials thereon. In this manner, the optical heaters are used during a regeneration cycle of cryogenic surfaces in an ion implanter.

Growing community of inventors

Topsfield, MA, United States of America

Jeffrey E Krampert