Cabot Microelectronics Corporation

Cmc Materials, Inc.

Jeffrey Dysard

Steven Grumbine

William J Ward

Lin Fu

Sriram Anjur

Timothy P Johns

Shoutian Li

Glenn Whitener

Pankaj K Singh

Paul M Feeney

Renhe Jia

Mary Cavanaugh

Ernest Shen

Vlasta A Brusic

Kevin P Dockery

Brian Reiss

Tina C Li

Christopher Thompson

Yun-Biao Xin

Li Wang

Viet Lam

Zhan Chen

Daniela White

Sudeep Pallikkara Kuttiatoor

Wei Weng

Sairam Shekhar

Daniel Clingerman

Lei Liu

Alexei Leonov

Jakub Nalaskowski

Timothy Johns

The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.

Polishing composition and method utilizing abrasive particles treated with an aminosilane

Methods for fabricating a chemical-mechanical polishing composition include growing colloidal silica abrasive particles in a liquid including an aminosilane compound such that the aminosilane compound becomes incorporated in the abrasive particles. A dispersion including such colloidal silica abrasive particles may be further processed to obtain a chemical-mechanical polishing composition including colloidal silica particles having the aminosilane compound incorporated therein.

Methods for fabricating a chemical-mechanical polishing composition

A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

Composition for tungsten CMP

A chemical-mechanical polishing composition includes colloidal silica abrasive particles having a chemical compound incorporated therein. The chemical compound may include a nitrogen-containing compound such as an aminosilane or a phosphorus-containing compound. Methods for employing such compositions include applying the composition to a semiconductor substrate to remove at least a portion of a layer.

Tungsten chemical-mechanical polishing composition

A chemical-mechanical polishing composition includes colloidal silica abrasive particles having a chemical compound incorporated therein. The chemical compound may include a nitrogen-containing compound such as an aminosilane or a phosphorus-containing compound. Methods for employing such compositions include applying the composition to a semiconductor substrate to remove at least a portion of at least one of a copper, a copper barrier, and a dielectric layer.

Copper barrier chemical-mechanical polishing composition

A chemical-mechanical polishing composition includes colloidal silica abrasive particles dispersed in a liquid carrier. The colloidal silica abrasive particles include a nitrogen-containing or phosphorus-containing compound incorporated therein such that the particles have a positive charge. The composition may be used to polish a substrate including a silicon oxygen material such as TEOS.

Colloidal silica chemical-mechanical polishing composition

The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate with the chemical-mechanical polishing composition. The polishing composition comprises (a) abrasive particles that comprise ceria, zirconia, silica, alumina, or a combination thereof, (b) a metal ion that is a Lewis Acid, (c) a ligand that is an aromatic carboxylic acid, an aromatic sulfonic acid, an aromatic acid amide, an amino acid, or a hydroxy-substituted N-heterocycle, and (d) an aqueous carrier, wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 4.

Chemical-mechanical planarization of polymer films

A chemical-mechanical polishing composition includes colloidal silica abrasive particles dispersed in a liquid carrier having a pH in a range from about 1.5 to about 7. The colloidal silica abrasive particles include an aminosilane compound or a phosphonium silane compound incorporated therein. The composition may be used to polish a substrate including a silicon oxygen material such as TEOS.

A chemical-mechanical polishing concentrate includes at least 10 weight percent of a colloidal silica abrasive particle dispersed in a liquid carrier having a pH in a range from about 1.5 to about 7. The colloidal silica abrasive includes an aminosilane compound or a phosphonium silane compound incorporated therein. The concentrate may be diluted with at least 3 parts water per one part concentrate prior to use.

Colloidal silica chemical-mechanical polishing concentrate

The invention provides chemical-mechanical polishing compositions and methods of chemically-mechanically polishing a substrate with the chemical-mechanical polishing compositions. The polishing compositions comprise first abrasive particles, wherein the first abrasive particles are ceria particles, second abrasive particles, wherein the second abrasive particles are ceria particles, surface-modified silica particles, or organic particles, a pH-adjusting agent, and an aqueous carrier. The polishing compositions also exhibit multimodal particle size distributions.

Mixed abrasive polishing compositions

A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier and colloidal silica abrasive particles dispersed in the liquid carrier. The colloidal silica abrasive particles have a permanent positive charge of at least 6 mV. About 30 percent or more of the colloidal silica abrasive particles include three or more aggregated primary particles.

Composition for tungsten buffing

A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, and a polycationic amine compound in solution in the liquid carrier. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine containing polymer in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

Growing community of inventors

St. Charles, IL, United States of America

Jeffrey Dysard