Lumileds LLC

Jeffrey DiMaria

Yu-Chen Shen

Florent Monestier

Erik William Young

Antonio Lopez Julia

A light-emitting diode (LED) die can include a p-n junction between a p-doped semiconductor material and an n-doped semiconductor material. The LED die can include vias that can electrically power the p-n junction. The vias can optionally be electrically connected in parallel to one another. A controller can supply current to the vias to electrically power the LED die. The vias can be distributed with a density that peaks at or near a center of the LED die and decreases with increasing distances away from the peak of the density, such that when the vias are electrically powered, the LED die emits light with a surface luminance that peaks at or near the center of the LED die and decreases with increasing distances away from the peak of the surface luminance.

LED die having centrally peaked surface luminance

Described are light emitting diode (LED) devices comprising a mesa with semiconductor layers, the semiconductor layers including an N-type layer, an active layer, and a P-type layer. A patterned transparent conductive oxide layer is on the top surface of the mesa. The patterned transparent conductive oxide layer has a first portion with a first thickness and a second portion with a second thickness, the second thickness less than the first thickness. Optical loss of the LED is reduced in the thinned region of the transparent conductive oxide layer.

Light emitting diode devices with patterned TCO layer including different thicknesses

Described are light emitting diode (LED) devices comprising a mesa with semiconductor layers, the semiconductor layers including an N-type layer, an active layer, and a P-type layer. The mesa has a top surface and at least one side wall, the at least one side wall defining a trench having a bottom surface. A passivation layer is on the at least one side wall and on the top surface of the mesa, the passivation layer comprises one or more a low-refractive index material and distributed Bragg reflector (DBR). A p-type contact is on the top surface of the mesa, and an n-type contact on the bottom surface of the trench.

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San Jose, CA, United States of America

Jeffrey DiMaria