Micron Technology Incorporated

Round Rock Research, LLC

Jeffrey D Bruce

Gordon D Roberts

James E Miller, Jr

Manny K Ma

Daryl L Habersetzer

Eric T Stubbs

Kurt D Beigel

Douglas John Cutter

Joey Shah

Peter Parker Altice

Richard A Mauritzson

Jeff A Mckee

Manny Kin F Ma

Kevin G Duesman

Aaron M Schoenfeld

Moshe Reuven

Donald E Robinson

Ed Jenkins

Jeffrey A McKee

Darryl L Habersetzer

Kurt D Biegel

An imaging system includes a pixel that does not require a row select transistor. Instead, an operating voltage is selectively provided to the pixel's readout circuitry, and the readout circuitry provides output signals based on charge or voltage of a storage node. The operating voltage can be selectively provided to each row of a pixel array by a row driver. Each pixel includes a source follower transistor that provides an output signal on a column output line for readout. An anti-blooming transistor may be linked to each pixel's photosensor to provide an overflow path for electrons during charge integration, prior to transfer of charge to the pixel's storage node by a transfer transistor. Electrons not produced by an image are introduced to the photosensor prior to image acquisition, filling traps in the photosensor to reduce image degradation.

Resetting a row driven imager pixel

Row driven imager pixel

A method for automatically measuring the modulation transfer function of an imager is disclosed. A opaque mask is placed over selected columns and rows of the imager during fabrication. In the course of an automated process, photons are uniformly shone over the image sensor. The amount of the input signal that flows from the unmasked pixel cells to the masked pixel cells can then be measured and the modulation transfer function can be determined.

Method for automated testing of the modulation transfer function in image sensors

Row driver for selectively supplying operating power to imager pixel

As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing. The circuit is configured to accept and apply a plurality of voltages, either through a contact pad or from a series of discrete voltage sources coupled to the circuit.

Method of preparing to test a capacitor

Circuit and method for voltage regulation in a semiconductor device

A method for upgrading or remediating semiconductor devices utilizing a remediation, adaptation, modification or upgrade chip in a piggyback configuration with a primary bare chip to achieve an upgrade, modification or adaptation of the primary chip or remedy a design or fabrication problem with the primary chip.

Method for employing piggyback multiple die &num;3

Method of compensating for a defect within a semiconductor device

Driver circuit for a voltage-pulling device

Method of stressing a memory device

Growing community of inventors

Meridian, ID, United States of America

Jeffrey D Bruce