Cree Gmbh

Jeffrey Carl Britt

David T Emerson

Raymond Rosado

Michael P Laughner

Peter Scott Andrews

Christopher P Hussell

Amber Christine Abare

Brandon Stanton

John Adam Edmond

Michael John Bergmann

Bernd P Keller

James Ibbetson

Jesse Colin Reiherzer

Praneet Jayant Athalye

Joseph Gates Clark

Ashay Chitnis

Jasper S Cabalu

Yankun Fu

Harsh Sundani

Justin Lydon

Eric J Tarsa

Matthew Donofrio

Kevin Haberern

Arpan Chakraborty

Jeremy S Nevins

Craig William Hardin

James Seruto

Light emitter packages, systems, and methods having improved performance are disclosed. In one aspect, a light emitter package can include a submount that can include an anode and a cathode. A light emitter chip can be disposed over the submount such that the light emitter chip is mounted over at least a portion of the cathode and wirebonded to at least a portion of the anode.

Light emitter packages, systems, and methods having improved performance

LED packages and related methods are provided. The LED packages can include a submount having a top and bottom surface and a plurality of top electrically conductive elements on the top surface of the submount. An LED can be disposed on one of the top electrically conductive elements. The LED can emit a dominant wavelength generally between approximately 600 nm and approximately 650 nm, and more particularly between approximately 610 nm and approximately 630 nm when an electrical signal is applied to the top electrically conductive elements. A bottom thermally conductive element can be provided on the bottom surface and is not in electrical contact with the top electrically conductive elements. A lens can be disposed over the LED. The LED packages can have improved lumen performances, lower thermal resistances, improved efficiencies, and longer operational lifetimes.

Light emitting die (LED) packages and related methods

Light emitting diode (LED) packages and methods are disclosed herein. In one aspect, a light emitting package is disclosed. The light emitting package includes one or more areas of conductive material having a thickness of less than approximately 50 microns (&#x3bc;m). The package can further include at least one light emitting diode (LED) electrically connected to the conductive material and at least one thin gap disposed between areas of conductive material.

Light emitting diode (LED) packages and related methods

Light emitter devices and methods with reduced dimensions and improved light output are provided. In one embodiment, a light emitter device includes a submount having an area of approximately 6 square millimeters (mm) or less. The device can further include a light emitting chip on the submount and a lens disposed over the light emitting chip and positioned on the submount. The device can be operable for emitting light at approximately 100 lumens or higher.

Light emitter devices and methods with reduced dimensions and improved light output

Horizontal light emitting diodes include anode and cathode contacts on the same face and a transparent substrate having an oblique sidewall. A conformal phosphor layer having an average equivalent particle diameter d50 of at least about 10 &#x3bc;m is provided on the oblique sidewall. High aspect ratio substrates may be provided. The LED may be directly attached to a submount.

Horizontal light emitting diodes including phosphor particles

Multiple configuration light emitting diode (LED) devices and methods are disclosed wherein LEDs within the device can be selectively configured for use in higher voltage, or variable voltage, applications. Variable arrangements of LEDs can be configured. Arrangements can include one or more LEDs connected in series, parallel, and/or a combination thereof. A surface over which one or more LEDs may be mounted can comprise one or more electrically and/or thermally isolated portions.

Multiple configuration light emitting devices and methods

Solid state (e.g., LED) lighting devices include multiple emitters mounted on or over a substrate comprising insulating material with conductive traces thereon, with various emitters being independently controllable with multiple pairs of anodes and cathodes that may be arranged on an opposite surface of the substrate than the emitters. Electrically conductive vias may be defined through the insulating substrate, and a molded lens may be provided over the substrate and emitters mounted thereon. Various combinations of independently controllable emitters or emitter groups may be provided, for example, a red emitter in combination with multiple blue shifted yellow (BSY) emitters, or separately controllable red, green, blue, and white (e.g., BSY) emitters.

Light emitting devices including multiple anodes and cathodes

Light emitter devices with improved light extraction and related methods are disclosed. In one embodiment, the light emitter device can include a submount, at least one light emitting chip disposed over the submount, and a lens disposed over the light emitting chip. The lens can include a lens base that can have substantially the same geometry as a geometry of the submount.

Light emitter devices and methods, utilizing light emitting diodes (LEDs), for improved light extraction

High voltage array light emitting devices and fixtures are disclosed. In one embodiment a light emitting device can include a submount, a light emission area disposed over the submount and a retention material adapted to be dispensed about the light emission area. The light emitting device can be operable at high voltages which are greater than approximately 40 volts (V). In one aspect, the retention material can be least partially disposed within the light emission area such that the retention material physically separates a first section of the light emission area from a second section of the light emission area.

High voltage array light emitting diode (LED) devices and fixtures

Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.

Wafer level phosphor coating method and devices fabricated utilizing method

High density multi-chip LED devices are described. Embodiments of the present invention provide high-density, multi-chip LED devices with relatively high efficiency and light output in a compact size. An LED device includes a plurality of interconnected LED chips and an optical element such as a lens. The LED chips may be arranged in two groups, wherein the LED chips within each group are connected in parallel and the groups are connected in series. In some embodiments, the LED device includes a submount, which may be made of ceramic. The submount may include a connection bus and semicircular areas to which chips are bonded. Wire bonds can be connected to the LED chips so that all the wire bonds are disposed on the outside of a group of LED chips to minimize light absorption.

High density multi-chip LED devices

A method for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs, typically on a wafer, and coating the LEDs with a conversion material so that at least some light from the LEDs passes through the conversion material and is converted. The light emission from the LED chips comprises light from the conversion material, typically in combination with LED light. The emission characteristics of at least some of the LED chips is measured and at least some of the conversion material over the LEDs is removed to alter the emission characteristics of the LED chips. The invention is particularly applicable to fabricating LED chips on a wafer where the LED chips have light emission characteristics that are within a range of target emission characteristics. This target range can fall within an emission region on a CIE curve to reduce the need for binning of the LEDs from the wafer. The emission characteristics of the LED chips in the wafer can be tuned to the desired range by micro-machining the conversion material over the LEDs.

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Cary, NC, United States of America

Jeffrey Carl Britt