Wolfspeed, Inc.

Jeffrey C Seaman

Robert Tyler Leonard

Simon Bubel

Matthew David Conrad

Elif Balkas

Yuri Khlebnikov

Caleb A Kent

Steven Griffiths

Michael J Paisley

Varad R Sakhalkar

Oleksandr Kramarenko

Eugene Deyneka

Valeri Fedorovich Tsvetkov

Adrian Powell

Silicon carbide (SiC) wafers and related methods are disclosed that include large diameter SiC wafers with wafer shape characteristics suitable for semiconductor manufacturing. Large diameter SiC wafers are disclosed that have reduced deformation related to stress and strain effects associated with forming such SiC wafers. As described herein, wafer shape and flatness characteristics may be improved by reducing crystallographic stress profiles during growth of SiC crystal boules or ingots. Wafer shape and flatness characteristics may also be improved after individual SiC wafers have been separated from corresponding SiC crystal boules. In this regard, SiC wafers and related methods are disclosed that include large diameter SiC wafers with suitable crystal quality and wafer shape characteristics including low values for wafer bow, warp, and thickness variation.

Large diameter silicon carbide wafers

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Louisburg, NC, United States of America

Jeffrey C Seaman