Novellus Systems Incorporated

Lam Research Corporation

Other

Siliconix Incorporated

Jeffrey C Benzing

Eliot K Broadbent

Barry Lee Chin

Christopher William Burkhart

Everhardus P Van De Ven

Nicolas J Bright

Edward J McInerney

Kenneth P MacWilliams

Jay E Uglow

Timothy M Archer

Dave Hemker

Lawrence C Lane

J Kirkwood Rough

Michael N Susoeff

Edward J Augustyniak

Jeffrey A Tobin

R Marshall Stowell

Sesha Varadarajan

John R Kelly

J Kirkwood H Rough

David A Pechin

Martin N Scales

Kirkwood H Rough

Dave J Hemker

A plasma-enhanced chemical vapor deposition (PECVD) process including plasma particle extraction is described. Charged particles suspended in discharge volume are moved together with a plasma and can then be flushed away. The particle extraction process reduces unwanted particles on the wafer after deposition and reduces total process time. In some embodiments, the process can involve powering an electrode in the process chamber located away from the wafer. This electrode can be powered up as the main deposition electrode is powered down.

Plasma particle extraction process for PECVD

A dielectric structure and method for making a dielectric structure for dual-damascene applications over a substrate are provided. The method includes forming a barrier layer over the substrate, forming an inorganic dielectric layer over the barrier layer, and forming a low dielectric constant layer over the inorganic dielectric layer. In this preferred example, the method also includes forming a trench in the low dielectric constant layer using a first etch chemistry. The etching is timed to etch through a partial thickness of the low dielectric constant layer and the first etch chemistry is optimized to a selected low dielectric constant material. The method further includes forming a via hole in the inorganic dielectric layer using a second etch chemistry, such that the via is within the trench. In a specific example, the inorganic dielectric layer can be an un-doped TEOS oxide or a fluorine doped oxide, and the low dielectric constant layer can be a carbon doped oxide (C-oxide) or other low K dielectrics.

Methods for making dual-damascene dielectric structures

A dielectric structure and method for making a dielectric structure for dual-damascene applications over a substrate are provided. The method includes forming a barrier layer over the substrate, forming an inorganic dielectric layer over the barrier layer, and forming a low dielectric constant layer over the inorganic dielectric layer. In this preferred example, the method also includes forming a trench in the low dielectric constant layer using a first etch chemistry, and forming a via in the inorganic dielectric layer using a second etch chemistry, such that the via is within the trench. In another specific example, the inorganic dielectric layer can be an un-doped TEOS oxide or a fluorine doped oxide, and the low dielectric constant layer can be a carbon doped oxide (C-oxide) or other low K dielectrics.

Dual-damascene dielectric structures

The present invention relates to porous materials, typically xerogels or aerogels, having a low dielectric constant but relatively poor mechanical strength. The present invention relates to polymeric coatings, preferably parylene, coated on inorganic xerogels or aerogels so as to increase the mechanical strength while not substantially degrading the dielectric properties of the resulting coated material. Silica xerogel conformally coated with parylene AF-4 is described.

Low dielectric constant porous materials having improved mechanical strength

Dual-damascene dielectric structures and methods for making the same

An induction plasma source for integrated circuit fabrication includes an induction coil which defines a generally convex surface. The convex surface may be in the form of a spherical section less than a hemisphere, a paraboloid, or some other smooth convex surface. The windings of the induction coil may be spaced at different intervals in different sections of the coil and may be in multiple layers in at least a portion of the coil. Varying the shape of the coil and the distribution of the coil windings allows the plasma to be shaped in a desired manner.

Plasma process apparatus for integrated circuit fabrication having dome-shaped induction coil

A passive mechanism for centering a wafer on a chuck and with respect to a backside exclusion gas ring includes a plurality of wheels that are rotatably mounted in a circular pattern at the top surface of a chuck. The axis of rotation of each wheel is parallel to the top surface of the chuck and perpendicular to a radius extending outward from the centerpoint of the chuck surface. When a wafer is placed on the chuck, its edge contacts the wheels and, by its own weight, the wafer moves toward the center of the chuck, thereby centering itself. The wafer either slides on the wheels or, if the frictional force between the wafer and one or more of the wheels is great enough, the wafer causes the wheel to turn. The wheels may be mounted on the chuck, a carrier ring or a wafer transfer arm for moving wafers between processing stations. In one embodiment the alignment wheels are mounted on a carrier ring, and a second alignment mechanism aligns the carrier ring to the chuck.

Apparatus for aligning substrate to chuck in processing chamber

A platen supports a substrate on an interior platen region during the deposition of materials such as tungsten, metal nitrides, other metals, and silicides in a chemical vapor deposition ('CVD') reactor. A deposition control gas composed of a suitable inert gas such as argon or a mixture of inert and reactive gases such as argon and hydrogen is introduced into the CVD reactor. Deposition control gas is preferably introduced through a restrictive opening in a gas orifice surrounding the platen interior region and exits near an edge of the substrate. The restrictive opening accommodates a uniform deposition control gas flow proximate to an edge of the substrate at a pressure greater than reactor pressure near the substrate edge. The deposition control gas substantially prevents process gas access to the substrate edge and backside. In one embodiment, the restrictive opening is formed by placing a restrictive insert within a gas groove surrounding the platen interior region. In another embodiment, the restrictive opening is formed by an exclusion guard substantially uniformly spaced from the edge of the substrate.

Gas-based substrate deposition protection

A cyclone evaporator includes an evaporator body with an evaporation chamber therein. The evaporation chamber preferably includes a thermally conductive sidewall having a generally cylindrical upper portion and a downwardly tapered lower portion. The evaporator body further includes a cover having a vapor outlet opening into the evaporation chamber and an outlet tube. The outlet tube circumscribes the vapor outlet and extends into a lower portion of the evaporation chamber. A liquid precursor passage and a carrier gas passage extend through the evaporator body and open into the evaporation chamber. In one embodiment, the carrier gas passage is positioned to direct carrier gas parallel to liquid precursor flow and intersect the liquid precursor at a liquid precursor passage outlet within the evaporation chamber. In another embodiment, the carrier gas passage is positioned to direct carrier gas across an outlet of liquid precursor passage. In both embodiments, the carrier gas facilitates atomization of the liquid precursor and flows cyclonically to distribute the atomized liquid precursor within the evaporation chamber. The liquid precursor deposits on the thermally conductive evaporation chamber wall and evaporates to form a gas precursor. The gas precursor flows with the carrier gas and exits the cyclone evaporator through the outlet tube and the vapor outlet. The cyclone evaporator is particularly advantageous for evaporating low vapor pressure liquids useful in semiconductor fabrication processes such as chemical vapor deposition.

Process of evaporating a liquid in a cyclone evaporator

A platen supports a wafer during the deposition of tungsten, metal nitrides, other metals, and silicides in a chemicalvapor deposition reactor. A deposition control gas that includes a suitable inert gas such as argon or a mixture of inert and reactant gases such as argon and hydrogen is introduced through a restrictive opening into an ambient in the reactor. An exclusion guard aligned with the platen has an extension extending over a frontside peripheral region of the wafer. Deposition control gas is introduced under the exclusion guard extension and exits through a restrictive opening between the exclusion guard extension and a wafer frontside peripheral region. The restrictive opening provides a uniform pressure of deposition control gas at the edge and frontside of the wafer to prevent deposition on the wafer edge and backside.

Apparatus for preventing deposition on frontside peripheral region and

A platen supports a wafer during the deposition of tungsten, metal nitrides, other metals, and silicides in a chemical vapor deposition reactor. A deposition control gas that includes a suitable inert gas such as argon or a mixture of inert and reactant gases such as argon and hydrogen is introduced through a restrictive opening into an ambient in the reactor. An exclusion guard aligned with the platen has an extension extending over a frontside peripheral region of the wafer. Deposition control gas is introduced under the exclusion guard extension and exits through a restrictive opening between the exclusion guard extension and a wafer frontside peripheral region. The restrictive opening provides a uniform pressure of deposition control gas at the edge and frontside of the wafer to prevent deposition on the wafer edge and backside.

Exclusion guard and gas-based substrate protection for chemical vapor

Cyclone evaporator

A platen supports a substrate on an interior platen region during the deposition of materials such as tungsten, metal nitrides, other metals, and silicides in a chemical vapor deposition ('CCVD') reactor. A deposition control gas composed of a suitable inert gas such as argon or a mixture of inert and reactive gases such as argon and hydrogen is introduced into the CVD reactor. Deposition control gas is preferably introduced through a restrictive opening in a gas orifice surrounding the platen interior region and exits near an edge of the substrate. The restrictive opening accommodates a uniform deposition control gas flow proximate to an edge of the substrate at a pressure greater than reactor pressure near the substrate edge. The deposition control gas substantially prevents process gas access to the substrate edge and backside. In one embodiment, the restrictive opening is formed by placing a restrictive insert within a gas groove surrounding the platen interior region. In another embodiment, the restrictive opening is formed by an exclusion guard substantially uniformly spaced from the edge of the substrate.

Growing community of inventors

Saratoga, CA, United States of America

Jeffrey C Benzing