International Business Machines Corporation

Globalfoundries Inc.

Spinal Usa, Inc.

Globalfoundries U.S. Inc.

Other

Zavation Medical Products, LLC

Advanced Micro Devices Corporation

Jeffrey Bowman Johnson

Robert Mark Rassel

Douglas Duane Coolbaugh

David Charles Sheridan

Andres Bryant

Alvin Jose Joseph

John J Ellis-Monaghan

James William Adkisson

Chengwen Pei

Xuefeng Liu

Geng Wang

James Stuart Dunn

Hon-Sum Philip Wong

Paul Christian Parries

Terence B Hook

Mark David Jaffe

Alain F Loiseau

Bradley Alan Orner

Edward J Nowak

Brent A Anderson

Yanli Zhang

Joseph Ervin

Chung H Lam

David Louis Harame

Viorel C Ontalus

Anthony K Stamper

Qizhi Liu

Robert Russell Robison

Brian Joseph Greene

Yun Shi

John Lawrence Walker

John Franklin Cummins

Tenko Yamashita

Judson Robert Holt

Zhong-Xiang He

Zhengwen O Li

Jagar Singh

Ebenezer E Eshun

James Spiros Nakos

Robert Allen Groves

Michael Joseph Zierak

Gregory Gower Freeman

Peter B Gray

Jian Yu

Jeffrey P Gambino

Effendi Leobandung

Robert J Gauthier, Jr

Ramachandra Divakaruni

Jonghae Kim

Kevin K Chan

Arne Watson Ballantine

Haiting Wang

Qingqing Liang

Shreesh Narasimha

Edmund Juris Sprogis

Ramachandran Muralidhar

Matthew Joseph Breitwisch

Dae-Gyu Park

Renata A Camillo-Castillo

Michael John Hargrove

Philip Joseph Oldiges

David Michael Fried

Jerome Brett Lasky

Anil Kumar Chinthakindi

Seshadri Subbanna

Edward P Maciejewski

Peter James Lindgren

Stephen Arthur St Onge

Louis DeWolf Lanzerotti

David S Collins

Roger W Cheek

David Paul Brunco

Erin C Jones

Mete Erturk

Basanth Jagannathan

Kangguo Cheng

Veeraraghavan S Basker

Chun-chen Yeh

Tak H Ning

Jed Hickory Rankin

Vibhor Jain

Dana Lee

Ravikumar Ramachandran

Robert K Leidy

JunJun Li

Richard Paul Volant

John Joseph Pekarik

Pranita Kulkarni

Jin Cai

Shesh Mani Pandey

Kathryn Turner Schonenberg

Abhishek Dube

William James Taylor, Jr

Kenneth Jay Stein

Richard A Phelps

Richard John Rassel

Thomas Safron Kanarsky

Ying Li

Gerald W Johnson

John Anthony Bracchitta

An IC structure that includes a trench isolation (TI) in a substrate having three portions of different dielectric materials. The portions may also have different widths. The TI may include a lower portion including a first dielectric material and having a first width, a middle portion including the first dielectric material and an outer second dielectric material, and an upper portion including a third dielectric material and having a second width greater than the first width. The first, second and third dielectric materials are different.

Trench isolation having three portions with different materials, and LDMOS FET including same

A disclosed structure includes a bipolar junction transistor (BJT) and a method of forming the structure. The structure includes a semiconductor layer on an insulator layer. The BJT includes a base region positioned laterally between emitter and collector regions. The emitter region includes an emitter portion of the semiconductor layer and an emitter semiconductor layer, which is within an emitter cavity in the insulator layer, which extends through an emitter opening in the emitter portion, and which covers the top of the emitter portion. The collector region includes a collector portion of the semiconductor layer and a collector semiconductor layer, which is within a collector cavity in the insulator layer, which extends through a collector opening in the collector portion, and which covers the top of the collector portion. Optionally, the structure also includes air pockets within the emitter and collector cavities.

Lateral bipolar transistor with emitter and collector regions including portions within In-insulator layer cavities and method

Embodiments of the disclosure provide a bipolar transistor structure with a collector on a polycrystalline isolation layer. A polycrystalline isolation layer may be on a substrate, and a collector layer may be on the polycrystalline isolation layer. The collector layer has a first doping type and includes a polycrystalline semiconductor. A base layer is on the collector layer and has a second doping type opposite the first doping type. An emitter layer is on the base layer and has the first doping type. A material composition of the doped collector region is different from a material composition of the base layer.

Bipolar transistor structure with collector on polycrystalline isolation layer and methods to form same

Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure includes a collector having a raised portion, an emitter having a raised portion, and a base laterally arranged between the raised portion of the emitter and the raised portion of the collector. The base includes an intrinsic base layer and an extrinsic base layer stacked with the intrinsic base layer. The structure further includes a stress liner positioned to overlap with the raised portion of the collector, the raised portion of the emitter, and the extrinsic base layer.

Bipolar junction transistors including a stress liner

A structure includes a first source/drain region and a second source/drain region in a semiconductor body; and a trench isolation between the first and second source/drain regions in the semiconductor body. A first doping region is about the first source/drain region, a second doping region about the second source/drain region, and the trench isolation is within the second doping region. A third doping region is adjacent to the first doping region and extend partially into the second doping region to create a charge trap section. A gate conductor of a gate structure is over the trench isolation and the first, second, and third doping regions. The charge trap section creates a charge controlled e-fuse operable by applying a stress voltage to the gate conductor.

Structure providing charge controlled electronic fuse

A bone pore or void filling composition is described. The composition includes a mixture of: a type I collagen and/or a type I collagen-glycosaminoglycan coprecipitate; a blend of polyethylene glycol polymers having different molecular weights; a bone growth stimulator; and bioactive glass. A kit for containing the bone pore or void filling composition, and methods for using the composition to fill a bone pore or void are also described.

Bone putty for bone pore and void filling

A biocompatible material for bone repair is described. The bone repair composition includes a mixture of a type I collagen, a type I collagen-glycosaminoglycan coprecipitate, tricalcium phosphate; and bioactive glass. Methods of using the composition for bone repair, and a kit for the bone repair composition are also described.

Bone repair composition and kit

Internal fixation devices are provided that include a plate having a rotatable screw lock mounted in a recess of the plate. The screw lock has a lock head including a laterally extending flange that has an outer edge that is below the upper surface of the plate. In a locked position, a portion of the upper surface of the plate covers at least a part of the lock head to reduce the likelihood of the screw lock being pushed off the plate. Further, in a locked position, the laterally extending flange obstructs passage of a screw through a corresponding screw hole. Such obstruction hinders screw migration.

Internal fixation devices with rotatable screw locks

In one embodiment, the invention comprises: defining a first volume in a layer of a semiconductor device; calculating a probability of finding at least one dopant atom in the first volume, based on a dopant distribution of the layer; in the case that the calculated probability is equal to or greater than a pre-determined threshold, defining at least one additional volume in the layer substantially equal to the first volume; and in the case that the calculated probability is less than the pre-determined threshold: aggregating the first volume with a second volume adjacent the first volume, the second volume being substantially equal to the first volume; and recalculating a probability of finding at least one dopant atom in the aggregated first and second volumes, based on the dopant distribution of the layer.

Modeling random dopant fluctuations in semiconductor devices

Generally, in one embodiment, the present disclosure is directed to a method for forming a transistor. The method includes: implanting a substrate to form at least one of an n and p doped region; depositing an epitaxial semiconductor layer over the substrate; forming trenches through the epitaxial layer and partially through at least one of an n and p doped region; forming dielectric isolation regions in the trenches; forming a fin in an upper portion of the epitaxial semiconductor layer by partially recessing the dielectric isolation regions; forming a gate dielectric adjacent at least two surfaces of the fin; and diffusing dopant from at least one of the n and p doped regions at least partially into the epitaxial semiconductor layer to form a diffusion doped transition region adjacent a bottom portion of the fin.

Method, apparatus, and system having super steep retrograde well with engineered dopant profiles

Disclosed are semiconductor structures comprising a field effect transistor (FET) having a low-resistance source/drain contact and, optionally, low gate-to-source/drain contact capacitance. The structures comprise a semiconductor body and, contained therein, first and second source/drain regions and a channel region. A first gate is adjacent to the semiconductor body at the channel region and a second, non-functioning, gate is adjacent to the semiconductor body such that the second source/drain region is between the first and second gates. First and second source/drain contacts are on the first and source/drain regions, respectively. The second source/drain contact is wider than the first and, thus, has a lower resistance. Additionally, spacing of the first and second source/drain contacts relative to the first gate can be such that the first gate-to-second source/drain contact capacitance is equal to or less than the first gate-to-first source/drain contact capacitance. Also disclosed are associated formation methods.

Semiconductor structures with field effect transistor(s) having low-resistance source/drain contact(s)

Kit and methods for collecting material in a vehicle are provided. A kit includes a collapsible receptacle fabricated from a hard material, a driver side fastener sized and configured to attach to the back of a driver side car seat, a front passenger side fastener sized and configured to attach to the back of a front passenger side car seat, an adjustable strap, and a floor mat. In use, the collapsible receptacle is releasably coupled to the floor mat and the strap is connected to the driver side fastener and the front passenger side fastener and secures the collapsible receptacle in place. After use, the collapsible receptacle can be detached from the floor mat and the material from the receptacle can be removed. When not in use, the receptacle can be collapsed to assume a stowed position.

Vehicular collection and disposal kits and methods

A method for fabricating a FinFET device includes forming a silicon-on-insulator (SOI) substrate having a semiconductor layer overlaying a buried oxide (BOX) layer; etching the semiconductor layer to form a plurality of fin structures and a semiconductor layer gap in between the plurality of fin structures and the BOX layer; depositing a sacrificial gate over at least one gate region, wherein the gate region separates a source and a drain region; disposing offset spacers on vertical sidewalls of the sacrificial gate; removing the sacrificial gate; removing the semiconductor layer gap in the gate region to prevent merging of the plurality of fin structures in the gate regions; and fabricating a high-k dielectric metal gate structure overlaying the fin structures in the gate region.

Structure and method to form a FinFET device

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Essex Junction, VT, United States of America

Jeffrey Bowman Johnson