Rohm and Haas Electronic Materials Cmp Holdings, Inc.

Dow Global Technolgoies LLC

Jeffrey Borcherdt Miller

George C Jacob

Diego Lugo

Yuhua Tong

Bainian Qian

Julia Kozhukh

Andrew Wank

Teresa Brugarolas Brufau

David Michael Veneziale

Marc R Stack

Marty W DeGroot

Tony Quan Tran

Jeffrey James Hendron

James T Murnane

Fengji Yeh

Robert A Brady

George McClain

Kathleen McHugh

Christopher Alan Young

Durron Andre Hutt

Brian T Cantrell

Kenneth Vavala

A method of forming a chemical mechanical polishing pad polishing layer is provided, including: providing a mold having a base with a negative of a groove pattern; providing a poly side (P) liquid component; providing an iso side (I) liquid component; providing a pressurized gas; providing an axial mixing device; introducing the poly side (P) liquid component, the iso side (I) liquid component and the pressurized gas to the axial mixing device to form a combination; discharging the combination from the axial mixing device at a velocity of 5 to 1,000 m/sec toward the base; allowing the combination to solidify into a cake; deriving the chemical mechanical polishing pad polishing layer from the cake; wherein the chemical mechanical polishing pad polishing layer has a polishing surface with the groove pattern formed into the polishing surface; and wherein the polishing surface is adapted for polishing a substrate.

Method of making polishing layer for chemical mechanical polishing pad

A method of forming a chemical mechanical polishing pad polishing layer is provided, including: providing a mold having a base with a negative of a groove pattern; providing a poly side (P) liquid component; providing an iso side (I) liquid component; providing a pressurized gas; providing an axial mixing device; introducing the poly side (P) liquid component, the iso side (I) liquid component and the pressurized gas to the axial mixing device to form a combination; discharging the combination from the axial mixing device at a velocity of 10 to 300 m/sec toward the base; allowing the combination to solidify into a cake; deriving the chemical mechanical polishing pad polishing layer from the cake; wherein the chemical mechanical polishing pad polishing layer has a polishing surface with the groove pattern formed into the polishing surface; and wherein the polishing surface is adapted for polishing a substrate.

A method of forming a chemical mechanical polishing pad composite polishing layer is provided, including: providing a first polishing layer component of a first continuous non-fugitive polymeric phase having a plurality of periodic recesses; discharging a combination toward the first polishing layer component at a velocity of 5 to 1,000 m/sec, filling the plurality of periodic recesses with the combination; allowing the combination to solidify in the plurality of periodic recesses forming a second non-fugitive polymeric phase giving a composite structure; and, deriving the chemical mechanical polishing pad composite polishing layer from the composite structure, wherein the chemical mechanical polishing pad composite polishing layer has a polishing surface on the polishing side of the first polishing layer component; and wherein the polishing surface is adapted for polishing a substrate.

Method of making composite polishing layer for chemical mechanical polishing pad

A method of forming a chemical mechanical polishing pad composite polishing layer is provided, including: providing a first polishing layer component of a first continuous non-fugitive polymeric phase having a plurality of periodic recesses; discharging a combination toward the first polishing layer component at a velocity of 10 to 300 msec, filling the plurality of periodic recesses with the combination; allowing the combination to solidify in the plurality of periodic recesses forming a second non-fugitive polymeric phase giving a composite structure; and, deriving the chemical mechanical polishing pad composite polishing layer from the composite structure, wherein the chemical mechanical polishing pad composite polishing layer has a polishing surface on the polishing side of the first polishing layer component; and wherein the polishing surface is adapted for polishing a substrate.

The invention is to a method of manufacturing a polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The method includes applying droplets of a liquid polymer against a substrate to form a plurality of pores. The liquid polymer contains a nonionic surfactant, the nonionic surfactant has a concentration sufficient to facilitate growth of pores within the liquid polymer and an ionic surfactant has a concentration sufficient to limit growth of the pores within the liquid polymer. Curing the solid polymer forms a polishing pad with final size of the plurality of pores controlled by the concentration of nonionic surfactant and ionic surfactants.

Controlled-porosity method for forming polishing pad

A chemical mechanical polishing pad is provided, comprising: a chemical mechanical polishing layer having a polishing surface; wherein the chemical mechanical polishing layer is formed by combining (a) a poly side (P) liquid component, comprising: an amine-carbon dioxide adduct; and, at least one of a polyol, a polyamine and a alcohol amine; and (b) an iso side (I) liquid component, comprising: polyfunctional isocyanate; wherein the chemical mechanical polishing layer has a porosity of &#x2267;10 vol %; wherein the chemical mechanical polishing layer has a Shore D hardness of &#x3c;40; and, wherein the polishing surface is adapted for polishing a substrate. Methods of making and using the same are also provided.

Chemical mechanical polishing pad and method of making same

A chemical mechanical polishing pad is provided containing: a polishing layer having a polishing surface; wherein the polishing layer comprises a first continuous non-fugitive polymeric phase and a second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has a plurality of periodic recesses; wherein the plurality of periodic recesses are occupied with the second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has an open cell porosity of &#x2266;6 vol %; wherein the second non-fugitive polymeric phase contains an open cell porosity of &#x2267;10 vol %; and, wherein the polishing surface is adapted for polishing a substrate.

Chemical mechanical polishing pad composite polishing layer formulation

A method of manufacturing grooved polishing layers for use in chemical mechanical polishing pads is provided, wherein the formation of defects in the polishing layers are minimized.

Method of manufacturing grooved chemical mechanical polishing layers

A method of manufacturing polishing layers having a window for use in chemical mechanical polishing pads is provided, wherein a plurality of polishing layers having an integral window are derived from a cake, wherein the formation of density defects in the cake and the surface roughness of the polishing layers formed are minimized.

Method of manufacturing chemical mechanical polishing layers having a window

A method of manufacturing polishing layers for use in chemical mechanical polishing pads is provided, wherein a plurality of polishing layers are derived from a cake, wherein the formation of density defects in the cake and the surface roughness of the polishing layers formed are minimized.

Method of manufacturing chemical mechanical polishing layers

A method of manufacturing polishing layers for use in chemical mechanical polishing pads is provided, wherein the formation of density defects in the polishing layers is minimized.

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West Chester, PA, United States of America

Jeffrey Borcherdt Miller