Hughes Electronics Corporation

University of California

Hughes Electroncis Corporation

Jeffrey B Shealy

Mehran Matloubian

Lawrence E Larson

Angelos Alexanian

Robert Armstrong York

Michael G Case

David B Rensch

Perry A Macdonald

A highly uniform, planar and high speed JHEMT-HBT MMIC is fabricated using a single growth process. A multi-layer structure including a composite emitter-channel layer, a base-gate layer and a collector layer is grown on a substrate. The composite emitter-channel layer includes a sub-emitter/channel layer that reduces the access resistance to the HBT's emitter and the JHEMT's channel, thereby improving the HBT's high frequency performance and increasing the JHEMT's current gain. The multi-layer structure is then patterned and metallized to form an HBT collector contact, planar HBT base and JHEMT gate contacts, and planar HBT emitter and JHEMT source and drain contacts.

Junction high electron mobility transistor-heterojunction bipolar

A combined test fixture and spatial-power-combined amplifier includes a base, a first waveguide mounting flange engaged to said base, a second waveguide mounting flange engaged to said base, a waveguide input fixed to said first flange, a waveguide output fixed to said second flange, an amplifier array disposed between said first flange and second flange, said array comprising a plurality of semiconductors for amplifying a signal, and a spacer for spacing apart said semiconductors. A plurality of amplifier cards constitute the array, with the cards being disposed in various arrangements which include a linearly stacked arrangement and radially stacked arrangement. The first and second waveguide mounting flanges are constructed to slide along the base to enable the amplifier array to be easily changed.

Universal fixture/package for spatial-power-combined amplifier

An apparatus and method of processing a planar HEMT or FET semiconductor device is disclosed. An ohmic metalization is patterned on a semiconductor surface then lifted-off. A plurality of process control monitors are isolated, preferably using a wet etch process. The process control monitors preferably include transmission line patterns (TLMs) and etch field effect transistors The TLMs measure the contact resistance during the ohmic alloy process, and the etch field effect transistors monitor the drain current during the gate-recess step. The ohmic metalizations are then alloyed, and a gate is written using an electron beam. The semiconductor device is isolated, followed by application of an overlay which connects all resulting planar device connecting pads.

Method for manufacturing planar field effect transistors and planar high

A system for redistributing a television signal to a multiplicity of receiver units within a multiple dwelling unit (MDU) includes a main receiving antenna which receives a broadband television signal and a translation device that translates the broadband television signal into a different carrier frequency band. One or more broadcasting antennas, located at advantageous sites within the MDU, transmit the translated television signal along one or more walls of the MDU to be received by antennas associated with one or more individual receiver units. Each receiver unit demodulates the received television signal and provides a user-specified channel to a television set for display.

Growing community of inventors

Thousand Oaks, CA, United States of America

Jeffrey B Shealy