Texas Instruments Corporation

Jeffrey Allen Hanson

Michael Louis Hayden

Keith W Melcher

Patricia Ann Constandine

Robert Mark Reynolds

Monte A Douglas

Lee M Loewenstein

Mona M Eissa

Nilesh Shantaram Doke

Systems and methods and resulting compositions of matter including silicon solids from a mixture of silicon and water. The mixture is collected at a collection stage from at least one wafer abrasion process performed on a silicon surface having an impurity concentration &#x2266;0.1 ppb and extracting one portion of the water from the mixture using at least one dryer stage to form a dry cake. The dry cake includes at least 99.99% silicon by weight excluding water and non-silicon species, where a concentration of water in the dry cake is between 0.05% and 1% by weight, and where a concentration of non-silicon species in the dry cake is between 0.05% and 1% by weight.

System and method for production of high purity silicon solids and solids therefrom

A method of manufacturing a semiconductor device includes placing a sample of a liquid chemical containing a contaminant on a substantially impurity-free surface of a substrate. The liquid chemical is evaporated, leaving the contaminant on the surface. The contaminant is concentrated in a scanning solution, which is then evaporated to form a residue. A concentration of the contaminant in the residue is determined.

Method for measuring contamination in liquids at PPQ levels

An embodiment of the invention is an apparatus having a cleaning tank, a megasonic energy source, and an intake pipewhere a membrane contactoris coupled to the intake pipeto change the concentration of nitrogen gas in the deionized watercontained in intake pipeto a range between 5.4% to 54% of saturation. Another embodiment is a method of changing the concentration of nitrogen gas in deionized waterto a range between 5.4% to 54% of saturation.

Control of dissolved gas levels in deionized water

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Allen, TX, United States of America

Jeffrey Allen Hanson