International Business Machines Corporation

Jeffrey Alan Knight

Ashwinkumar C Bhatt

Thomas P Duffy

Voya Rista Markovich

Allen Frederick Moring

James W Fuller, Jr

Subahu Dhirubhai Desai

Frank Daniel Egitto

David John Russell

Robert Maynard Japp

Luis Jesus Matienzo

Mark David Poliks

James Warren Wilson

Elizabeth F Foster

David Erle Houser

Robert David Sebesta

Raymond Thomas Galasco

Stephen Wesley MacQuarrie

Thomas E Kindl

Joseph Alphonse Kotylo

Robert Douglas Edwards

Amarjit S Rai

Robert Jeffrey Day

Richard William Malek

Ross Downey Havens

Mark L Janecek

William T Wike

Mary Beth Fletcher

David Michael Passante

Ronald Clothier

Anilkumar Chinuprasad Bhatt

James Paul Walsh

Louis J Konrad, Iii

Edward G Bundga

Anne Marie Quinn

Anne M Quinn, Deceased

Michael D Dinardo

Anikumar Chinuprasad Bhatt

Thomas Patrick Duffy

Ashwinkumar Chinuprasad Bhatt

Embedded flush circuitry features are provided by providing a carrier foil having an electrically conductive layer therein and coating the electrically conductive layer with a dielectric material. Circuitry features are formed in the dielectric material and conductive metal is plated to fill the circuitry features.

Structure having flush circuit features and method of making

Embedded flush circuitry features are provided by depositing a conductive seed layer on the front side of a sacrificial carrier; plating a layer of conductive metal onto the seed layer and personalizing circuitry features. The front side of the carrier film is embedded into a dielectric material and the sacrificial carrier film is removed.

Structure having embedded flush circuitry features and method of fabricating

Structure having flush circuitry features and method of making

A method and structure for forming a metalized blind via. A dielectric layer is formed on a metallic layer, followed by laser drilling a depression in the dielectric layer such that a carbon film that includes the carbon is formed on a sidewall of the depression. If the laser drilling does not expose the metallic layer, then an anisotropic plasma etching, such as a reactive ion etching (RIE), may be used to clean and expose a surface of the metallic layer. The dielectric layer includes a dielectric material having a carbon based polymeric material, such as a permanent photoresist, a polyimide, and advanced solder mask (ASM). The metallic layer includes a metallic material, such as copper, aluminum, and gold. The carbon film is in conductive contact with the metallic layer, and the carbon film is sufficiently conductive to permit electroplating a continuous layer of metal (e.g., copper) directly on the carbon film without need of an electrolessly plated layer underneath the electroplated layer. The laser drilling is accomplished using a laser radiation having a wavelength between about 180 nanometers and about 600 nanometers. The depression may have any cross-sectional shape and any spatial distribution of depths. As an example, the depression may include a blind via, a rectangular channel, or a combination thereof.

Fabrication of a metalized blind via

Providing a layer of ZnCr intermediate a dielectric substrate and a heat spreader enhances the adhesion between the dielectric substrate and heat spreader.

Article exhibiting enhanced adhesion between a dielectric substrate and heat spreader and method

A method and structure for forming a metalized blind via. A dielectric layer is formed on a metallic layer, followed by laser drilling a depression in the dielectric layer such that a carbon film that includes the carbon is formed on a sidewall of the depression. If the laser drilling does not expose the metallic layer, then an anisotropic plasma etching, such as a reactive ion etching (RIE), may be used to clean and expose a surface of the metallic layer. The dielectric layer comprises a dielectric material having a carbon based polymeric material, such as a permanent photoresist, a polyimide, and advanced solder mask (ASM). The metallic layer includes a metallic material, such as copper, aluminum, and gold. The carbon film is in conductive contact with the metallic layer, and the carbon film is sufficiently conductive to permit electroplating a continuous layer of metal (e.g., copper) directly on the carbon film without need of an electrolessly plated layer underneath the electroplated layer. The laser drilling is accomplished using a laser radiation having a wavelength between about 180 nanometers and about 600 nanometers. The depression may have any cross-sectional shape and any spatial distribution of depths. As an example, the depression may include a blind via, then the blind via may have any cross-sectional shape, such as circular or non-circular, a rectangular channel, or a combination thereof.

The present invention is a method of providing a protective covering on an electronic package including a first circuitized substrate, a semiconductor chip positioned on and electrically coupled to the first substrate, and a plurality of conductors also on the substrate for electrically connecting the substrate to an external circuitized substrate. In one version, the method comprises covering substantially all of the external surfaces of the substrate, the semiconductor chip and a portion of the plurality of conductors with a protective covering from immersion in a dielectric solution (e.g., TEFLON AF). The coatings can also be applied by brushing, spraying, or chemical vapor deposition. In an alternative embodiment, all of the external surfaces, including all of the conductors, are coated with the protective covering (e.g., to facilitate package shipment or other handling). The resulting electronic packages are also described herein.

Electronic package utilizing protective coating

A chip carrier for wire bond-type chips is disclosed. This chip carrier employs organic dielectric materials, rather than ceramic materials, as is conventional. This chip carrier also employs at least one organic, photoimageable dielectric layer, having plated photo-vias, to electrically interconnect two (or more) layers of fan-out circuitry. This chip carrier further employs a single-tiered cavity to contain a chip, rather than a multi-tiered cavity, as is conventional. Moreover, this chip carrier includes thermal via holes and/or a metallic layer, directly beneath the chip, to enhance heat dissipation.

Chip carrier having a chip mounted on an organic dielectric substrate

Method for providing a protective coating and electronic package

According to the present invention, a technique for controlling the flow of plastic encapsulant which is applied over an integrated circuit (I/C) chip wire bonded to wire pads formed on a chip carrier substrate is provided. This technique includes applying a barrier material to the substrate surrounding the wire bond pads, which barrier material is in the form of two walls projecting upwardly from the surface thereof, and defining a well between the walls to confine the flow of the encapsulant material. This prevents the encapsulant material from flowing past a desired defined boundary and covering the circuit connection pads which are not intended to be covered.

Method and structure for constraining the flow of incapsulant applied to

A process for making a circuitized substrate is defined wherein the substrate is treated with two different, e.g., additive and subtractive, metallization processes. The process is thus able to effectively produce substrates including conductive features, e. g., high density circuit lines and chip heat-sinking pads, of two different degrees of resolution in a cost effective and expeditious manner. The resulting product is also defined.

Circuitized substrate with same surface conductors of different

Single-tiered organic chip carriers for wire bond-type chips

Structure for constraining the flow of encapsulant applied to an I/C

Chip carrier having an organic photopatternable material and a metal

Growing community of inventors

Endwell, NY, United States of America

Jeffrey Alan Knight