Applied Materials, Inc.

Novellus Systems Incorporated

Jeffrey A Tobin

Lara Hawrylchak

Christopher Sean Olsen

Canfeng Lai

Bernard Lloyd Hwang

Kevin Joseph Bautista

Jean Qing Lu

Joseph Michael Ranish

Aaron Muir Hunter

Matthew S Rogers

Kartik Bhupendra Shah

Jiping Li

Mehran Behdjat

Norman L Tam

Theresa Kramer Guarini

Malcolm J Bevan

Saurabh Chopra

Peter Stone

Roger Curtis

Chi Wei Lo

Martin Tran

Mehmet Tugrul Samir

Shu-Kwan Danny Lau

Peter I Porshnev

Thomas W Mountsier

Umesh M Kelkar

Masato Ishii

Jose Antonio Marin

Sairaju Tallavarjula

Chaitanya A Prasad

Tom Yu

Linda Lee Stenzel

Wei Liu

Bart Jan Van Schravendijk

Schubert S Chu

Errol Antonio C Sanchez

Nyi O Myo

Eliot K Broadbent

Johanes F Swenberg

Ken Kaung Lai

Jeffrey C Benzing

Karthik Ramanathan

Heng Pan

J Kirkwood H Rough

Hong Mei Zhang

Michael D Kilgore

Lananh Pham

Christopher J Rau

Palamurali Gajendra

James C Oswalt

Wilbert G M Van Den Hoek

Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.

Method and apparatus for selective nitridation process

A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises a coil disposed within a conductive plate, which may comprise nested conductive rings. The coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate.

Inductive plasma source with metallic shower head using b-field concentrator

Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include removing contaminants disposed on the substrate surface using a plasma process, and then cleaning the substrate surface by use of a remote plasma assisted dry etch process.

Method and apparatus for precleaning a substrate surface prior to epitaxial growth

Embodiments described herein relate to a showerhead having a reflector plate with a gas injection insert for radially distributing gas. In one embodiment, a showerhead assembly includes a reflector plate and a gas injection insert. The reflector plate includes at least one gas injection port. The gas injection insert is disposed in the reflector plate, and includes a plurality of apertures. The gas injection insert also includes a baffle plate disposed in the gas injection insert, wherein the baffle plate also includes a plurality of apertures. A first plenum is formed between a first portion of the baffle plate and the reflector plate, and a second plenum is formed between a second portion of the baffle plate and the reflector plate. The plurality of apertures of the gas injection insert and the plurality of apertures of the baffle plate are not axially aligned.

Showerhead design

Provided apparatus and methods for back side passivation of a substrate. The systems comprise an elongate support with an open top surface forming a support ring so that when a substrate is on the support ring, a cavity is formed within the elongate support. A plasma generator is coupled to the cavity to generate a plasma within the cavity to deposit a passivation film on the back side of the substrate.

Apparatus and methods for backside passivation

Inductive plasma source with metallic shower head using B-field concentrator

Embodiments of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one embodiment, the susceptor includes a first rim, an inner region coupled to and surrounded by the first rim, and one or more annular protrusions formed on the inner region. The one or more annular protrusions may be formed on the inner region at a location corresponding to the location where a valley is formed on the substrate, and the one or more annular protrusions help reduce or eliminate the formation of the valley.

Susceptor design to eliminate deposition valleys in the wafer

In one embodiment, a substrate support assembly includes a susceptor for supporting a substrate, and a supporting transfer mechanism coupled to the susceptor, the supporting transfer mechanism having a surface for supporting a peripheral edge of the substrate, the supporting transfer mechanism being movable relative to an upper surface of the susceptor.

Substrate transfer mechanisms

Embodiments of the disclosure generally relate to a support cylinder used in a thermal process chamber. In one embodiment, the support cylinder includes a hollow cylindrical body comprising an inner peripheral surface, an outer peripheral surface parallel to the inner peripheral surface, wherein the inner peripheral surface and the outer peripheral surface extend along a direction parallel to a longitudinal axis of the support cylinder, and a lateral portion extending radially from the outer peripheral surface to the inner peripheral surface, wherein the lateral portion comprises a first end having a first beveled portion, a first rounded portion, and a first planar portion connecting the first beveled portion and the first rounded portion, and a second end opposing the first end, the second end having a second beveled portion, a second rounded portion, and a second planar portion connecting the second beveled portion and the second rounded portion.

Support cylinder for thermal processing chamber

Embodiments of the invention provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second region for processing a semiconductor device, the process chamber comprising an inlet port formed in a sidewall of the process chamber, the inlet port being in fluid communication with the second region, and a delivery member disposed between the remote plasma chamber and the process chamber and having a passageway in fluid communication with the first region and the inlet port, wherein the delivery member is configured such that a longitudinal axis of the passageway intersects at an angle of about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port.

Embodiments described herein relate to a substrate carrier system. The substrate carrier system includes a carrier for transferring a substrate within a multi-chamber processing system. The carrier may be placed in a load lock chamber for receiving the substrate, and the substrate is transferred to a processing chamber on the carrier. In the processing chamber, the carrier, with substrate, is disposed on a susceptor. The carrier can also enhance thermal control of the edge of the substrate in the processing chamber. The substrate carrier system further includes positioning features for repeatable positioning of the substrate in the processing chamber and repeatable positioning of the carrier in the load lock chamber and the processing chamber.

Substrate carrier system

Growing community of inventors

Mountain View, CA, United States of America

Jeffrey A Tobin