Motorola Corporation

Jeffrey A Rollman

Jonathan K Abrokwah

Rodolfo Lucero

Frederick L Martin

Gregory S Raven

Edmund B Boucher

Curtis M Griffin

A frequency generation device (,) comprises a cascade of two phase-locked loops (,and,). The first PLL (,) is a frequency synthesizer while the second PLL, or offset loop (,), comprises a phase detector (,or,), loop filter (,or,), VCO (,or,) and a divider with near-unity modulus (,or,). In the case of a negative offset design, the near-unity divider (,) is placed in the offset loop feedback path. In a positive offset design, the near-unity divider (,) is placed in the path between the synthesizer VCO and the offset loop phase detector. Unlike existing art, there is no offset signal input to the second or offset loop (,).

Method and apparatus for producing an offset frequency

A multiple substrate mounting frame (,) includes first (,) and second (,) surfaces and a plurality of windows or cavities (,). A set of substrates having electrical circuitry (,) are attached and electrically connected to the first surface (,) of the mounting frame (,). The second surface (,) can then be electrically interconnected to a mother board (,). A leadless surface mountable assembly for multiple die (,) includes the mounting frame (,) which receives a plurality of substrates (,) and electrically interconnects them to each other and/or to a mother board (,). A heat sink (,) can be provided if the die (,) generate too much heat.

Mounting multiple substrate frame and leadless surface mountable assembly using same

An N-type HIGFET (10) utilizes two etch layers (17,18) to form a gate insulator (16) to be shorter that the gate electrode (21). This T-shaped gate structure facilitates forming source (23) and drain (24) regions that are separated from the gate insulator (16) by a distance (22) in order to reduce leakage current and increase the breakdown voltage.

N-type higfet and method

A HIGFET (10) utilizes an etch stop layer (17) to form a gate insulator (16) to be narrower than the gate electrode (21). This T-shaped gate structure facilitates forming source (23) and drain (24) regions that are separated from the gate insulator (16) by a distance (22) in order to reduce leakage current and increase the breakdown voltage.

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Phoenix, AZ, United States of America

Jeffrey A Rollman