Integra Technologies Limited

Jeffrey A Burger

Young H Kim

John H Titizian

Fouad F Boueri

An RF/microwave circuit is configured to eliminate the physical constraint that requires a sacrifice of one output series inductor wirebond for each shunt inductor wirebond. The circuit employs a multi-level metalized substrate as part of its output impedance matching network. The lower level of the multi-level substrate serves as an intermediate connection point for the output series inductor wirebonds as it extends from the output terminal of an active device to an output metallization pad. The upper level of the multi-level substrate serves to support a DC block capacitor and as an intermediate connection point for the shunt inductor wirebonds. The multi-level substrate allows the series inductor wirebonds to be positioned at a lower height, and the shunt inductor wirebonds at a greater height. Because they are at different heights, the physical constraint of sacrificing a series wirebond per a shunt inductor wirebond can be eliminated. This leads to improved power efficiency, higher gain, and greater bandwidth.

RF transistor output impedance technique for improved efficiency, output power, and bandwidth

An radio frequency (RF)/microwave power amplification circuit is disclosed herein having improved power and frequency characteristics. The RF power circuit is characterized by having the output capacitance of the device resonate with a shunt inductance that is physically closer to the device than provided in conventional RF power circuits. This is realized by mounting a direct current (DC) bypass capacitor directly on the same metalized pad that the device terminal is mounted on. By doing this, the inductance associated with a wire bond connection from the device to the capacitor is eliminated or at least reduced. Also disclosed is a dual cell power circuit that consists of matching the impedance characteristics of the active cells to each other by adjusting the circuit parameters in which the active devices interact with. In addition, an RF power circuit is disclosed that includes a pair of vertical cells in a parallel relationship formed on a thin semiconductor to cause more current flow through a metal layer rather than the lossy substrate. Furthermore, a novel metal-dielectric-metal chip capacitor is disclosed that is fabricated on a refractory metal substrate, which results in a high quality factor (Q) for the capacitor. The capacitor has contacts to both capacitor plates by way of its top metallization surfaces, and access to one of the plates through the bottom, i.e. the mounting surface of the capacitor. Additionally, a high power device is disclosed that encompasses at least some or all of the techniques described above to achieve an amplification that exhibits both high power and high cutoff frequency characteristics.

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Rolling Hills Estates, CA, United States of America

Jeffrey A Burger