E.i. Dupont De Nemours and Company

University of Nevada

The Dupont Merck Pharmaceutical Company

E. I. Du Pont De Nemours + Company

Jeffery Scott Thompson

Robert DiCosimo

Mark Scott Payne

Daniel P O'Keefe

Anna Panova

Robert Donald Fallon

Thomas Foo

Joseph J Zaher

F Glenn Gallagher

Xu Li

George C Fox

Alexander Zak Bradley

Kyung-Ho Park

Vinayakam Subramanyam

Karen E Linder

Leo J Maheu

Thomas H Tulip

Michael A Patz

Walter John Simmons

David Lincoln Thorn

Robert Dicosimo

Oswald Robert Bergmann

Sigridur Soley Kristjansdottir

Howard M Blank

Catherine E Radzewich

Joyce May Whang

Alison Marie Hapka

Alan P Carpenter, Jr

Alan B Carpenter, Jr

This invention provides processes for inhibiting the formation of copper oxides on substantially oxide-free copper surfaces by contacting a substantially oxide-free copper surface with a bifunctional ligand that contains both a metal-coordinating group and a tertiary amine group in an aqueous solution of pH about 2 to about 5.5. A thin layer of the bifunctional ligand formed by coordination of the dialkylaminoacetonitrile to the copper surface can be removed by heating under vacuum to regenerate a substantially oxide-free copper surface.

Process for inhibiting oxide formation on copper surfaces

A process is provided for producing glycolic acid from formaldehyde and hydrogen cyanide. More specifically, heat-treated formaldehyde and hydrogen cyanide are reacted to produce glycolonitrile having low concentrations of impurities. The glycolonitrile is subsequently converted to an aqueous solution of ammonium glycolate using an enzyme catalyst having nitrilase activity derived from72W (ATCC 57746). Glycolic acid is recovered in the form of the acid or salt from the aqueous ammonium glycolate solution using a variety of methods described herein.

Process for producing glycolic acid from formaldehyde and hydrogen cyanide

Atomic layer deposition processes for the formation of metal-containing films on surfaces are provided.

Atomic layer deposition of metal-containing films using surface-activating agents

Provided are novel 1,3-diimine copper complexes, and processes for using 1,3-diimine copper complexes in the deposition of copper on substrates, or in or on porous solids, by atomic layer deposition.

Volatile copper(1) complexes and processes for deposition of copper films by atomic layer deposition

Atomic layer deposition processes for the formation of tantalum-containing films on surfaces are provided. Also provided are novel tantalum complexes that can be used as tantalum precursors in the disclosed deposition processes.

Atomic layer deposition of tantalum-containing films using surface-activating agents and novel tantalum complexes

Various methods are provided for the enzymatic production of glycolic acid from glycolonitrile. These methods include: 1) use of72W nitrilase mutants having improved nitrilase activity for converting glycolonitrile to glycolic acid, and 2) methods to improve catalyst stability and/or productivity. The methods to improve catalyst stability/productivity include use of reaction stabilizers, running the reactions under substantially oxygen free conditions, and controlling the concentration of substrate in the reaction mixture.

Enzymatic production of glycolic acid

This invention is directed to processes for the formation of ruthenium-containing films on surfaces in atomic layer deposition (ALD) processes. The ALD process includes depositing a surface-activating group on the surface; exposing the deposit of the surface-activating complex to a ruthenium precursor to form a deposited ruthenium complex on the surface; and reacting the deposited ruthenium complex with a reducing agent to form a ruthenium-containing film on the surface. This invention is also directed to ruthenium complexes, RuLL*, that can be used as ruthenium precursors in these processes.

Atomic layer deposition processes for the formation of ruthenium films, and ruthenium precursors useful in such processes

The present invention relates to novel 1,3-diimines and 1,3-diimine copper complexes and the use of 1,3-diimine copper complexes for the deposition of copper on substrates or in or on porous solids in an atomic layer deposition process.

Copper (II) complexes for deposition of copper films by atomic layer deposition

The present invention relates to a novel atomic layer deposition process for the formation of copper films on substrates or in or on porous solids in an atomic layer deposition process.

Atomic layer deposition of copper using surface-activation agents

Growing community of inventors

West Chester, PA, United States of America

Jeffery Scott Thompson