International Business Machines Corporation

Jeffery L Hurd

Eric D Perfecto

Suryanarayana Kaja

Patrick William Dehaven

Charles C Goldsmith

Michele S Legere

Yun-Yu Wang

Rajarao Jammy

Johnathan E Faltermeier

Philip L Flaitz

Radhika Srinivasan

Francis G Trudeau

Dinah S Weiss

A process for controlling grain growth in the microstructure of thin metal films (e.g., copper or gold) deposited onto a substrate. In one embodiment, the metal film is deposited onto the substrate to form a film having a fine-grained microstructure. The film is heated in a temperature range of 70-100&deg; C. for at least five minutes, wherein the fine-grained microstructure is converted into a stable large-grained microstructure. In another embodiment, the plated film is stored, after the step of depositing, at a temperature not greater than &minus;20&deg; C., wherein the fine-grained microstructure is stabilized without grain growth for the entire storage period.

Device produced by a process of controlling grain growth in metal films

A process for controlling grain growth in the microstructure of thin metal films (e.g., copper or gold) deposited onto a substrate. In one embodiment, the metal film is deposited onto the substrate to form a film having a fine-grained microstructure. The film is heated in a temperature range of 70-100&deg;C. for at least five minutes, wherein the fine-grained microstructure is converted into a stable large-grained microstructure. In another embodiment, the plated film is stored, after the step of depositing, at a temperature not greater than &minus;20&deg; C., wherein the fine-grained microstructure is stabilized without grain growth for the entire storage period.

Process of controlling grain growth in metal films

A process for forming a small grain structure in a material within a semiconductor device near the interface of an adjacent dissimilar material, to result in a highly diffusive grain structure. The highly diffusive grain structure formed within one material enhances diffusion of a dopant impurity, and provides for improved dopant control in an adjacent dissimilar material.

Dopant control of semiconductor devices

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Marlboro, NY, United States of America

Jeffery L Hurd