Agere Systems Inc.

Lsi Corporation

Jeffery John Gilbert

Patrick Joseph Carberry

George John Libricz, Jr

Ralph Salvatore Moyer

Juan Alejandro Herbsommer

John William Osenbach

Hugo Fernando Safar

Thomas Herbert Shilling

Timothy Brooks Bambridge

Jeffrey Michael Klemovage

Electrical devices having tunable capacitance are provided. The tunable capacitance is achieved by placing an appropriate material between substrate layers and by controllably applying a pressure to the material to compress the material or alter the shape of a well in which the material is contained, and thereby alter the capacitance of the electrical device. The composition, shape and dimension of the embedded materials determine how the capacitance of the electrical device is altered upon compression of the embedded material in response to an applied control signal. Generally, as the embedded material is compressed, the material will become more dense and the capacitance of the integrated electrical device is altered.

Electrical devices having adjustable capacitance

A semiconductor device package comprises a container having a base and side walls of an electrically insulating material. A semiconductor device chip is disposed on the base, and a lead frame extends through the side walls. At least one electrical conductor couples the lead frame to the chip. A first layer of an electrically insulating cured gel covers the chip and the lead frame, and a second layer of an electrically insulating cured gel covers at least the portion of the first layer that covers the chip, but does not extend to the side walls. In one embodiment, the second layer has the shape of a dome. In a preferred embodiment the gel comprises silicone. In another embodiment a third layer of conformal insulating material is disposed on the second layer and essentially fills the container. Also is described is a method of making the package for use with RFLDMOS chips.

Packages for encapsulated semiconductor devices and method of making same

An integrated circuit device having a flexible leadframe, and techniques for fabricating the flexible leadframe and integrated circuit device, are provided. In one aspect of the invention, an integrated circuit device comprises a heat spreader having a top surface and a bottom surface. At least one integrated circuit die is attached to the top surface of the heat spreader. A flexible leadframe is also attached to the top surface of the heat spreader. The flexible leadframe has one or more flexible layers, including at least one flexible insulating layer. A plurality of electrically conductive traces are defined on the at least one flexible insulating layer.

Integrated circuit device having flexible leadframe

A semiconductor device package comprises a container including a base and sidewalls. The base is configured to support a semiconductor device chip, and a lead frame extends through at least one of the sidewalls. A portion of the lead frame within the sidewall has at least one aperture penetrating into the lead frame. The sidewall material extends into the aperture, thereby forming a strong interfacial bond that provides a low leakage, sidewall-lead-frame interface. The base has a reentrant feature that is positioned within the thickness of at least one of the sidewalls and engages the at least one sidewall, thereby forming a low leakage base-sidewall interface. The top surface of the base has a groove that is positioned within the thickness of at least one of the sidewalls and engages the at least one sidewall, thereby enhancing the low leakage base-sidewall interface.

Semiconductor device package with base features to reduce leakage

Electrical devices having tunable electrical characteristics are provided, such as variable resistors, capacitors and inductors. The tunable electrical characteristics are achieved by placing an appropriate material between substrate layers and by controllably applying a pressure to the material to compress the material or alter the shape of a well in which the material is contained, and thereby alter the electrical characteristics of the electrical device. The composition, shape and dimension of the embedded materials determine how the electrical characteristics of the electrical device are altered upon compression of the embedded material in response to an applied control signal. Generally, as the embedded material is compressed, the material will become more dense and the electrical characteristics of the integrated electrical device is altered.

Electrical devices having adjustable electrical characteristics

A semiconductor device package comprises a container including a base and sidewalls. The base is configured to support a semiconductor device chip, and a lead frame extends through at least one of the sidewalls. A portion of the lead frame within the sidewall has at least one aperture penetrating into the lead frame. The sidewall material extends into the aperture, thereby forming a strong interfacial bond that provides a low leakage, sidewall-lead-frame interface. The base has a reentrant feature that is positioned within the thickness of at least one of the sidewalls and engages the at least one sidewall, thereby forming a low leakage base-sidewalls interface. The top surface of the base has a groove that is positioned within the thickness of at least one of the sidewalls and engages the at least one sidewall, thereby enhancing the low leakage base-sidewall interface.

Growing community of inventors

Schwenksville, PA, United States of America

Jeffery John Gilbert