Advanced Micro Devices Corporation

Cypress Semiconductor Corporation

Spansion Llc.

Jeffery A Shields

Minh Van Ngo

Fei Wang

Mark T Ramsbey

Zoran Krivokapic

Matthew S Buynoski

Steven C Avanzino

Sameer S Haddad

Arvind Halliyal

Suzette Keefe Pangrle

Nicholas H Tripsas

Bryan K Choo

Manuj Rathor

Jusuke Ogura

James J Xie

Michael Vanbuskirk

Christie Marrian

Kevin Song

A present method of fabricating a memory device includes the steps of providing a dielectric layer, providing an opening in the dielectric layer, providing a first conductive body in the opening, providing a switching body in the opening, the first conductive body and switching body filling the opening, and providing a second conductive body over the switching body. In an alternate embodiment, a second dielectric layer is provided over the first-mentioned dielectric layer, and the switching body is provided in an opening in the second dielectric layer.

Damascene metal-insulator-metal (MIM) device with improved scaleability

A buried local interconnect and method of forming the same counterdopes a region of a doped substrate to form a counterdoped isolation region. A hardmask is formed and patterned on the doped substrate, with a recess being etched through the patterned hardmask into the counterdoped region. Dielectric spacers are formed on the sidewalls of the recess, with a portion of the bottom of the recess being exposed. A metal is then deposited in the recess and reacted to form silicide at the bottom of the recess. The recess is filled with fill material, which is polished. The hardmask is then removed to form a silicide buried local interconnect.

Buried silicide local interconnect with sidewall spacers and method for making the same

Growing community of inventors

Sunnyvale, CA, United States of America

Jeffery A Shields