Kenet Incorporated

Bitwave Semiconductor, Inc.

Tridev Research LLC

Jeff Venuti

Michael P Anthony

Joel L Dawson

Jose Bohorquez

John Kilpatrick

Transmitter architectures designed to accommodate both constant and non-constant of envelope modulation schemes and capable of providing local oscillator carrier frequencies within any one of numerous desired frequency bands, thus allowing compliance with many different communication standards. One example of a programmable frequency synthesizer includes a plurality of transmitter components and a microcontroller coupled to the frequency synthesizer and to the plurality of transmitter components. The microcontroller is adapted to provide a frequency control signal to the frequency synthesizer to control a frequency of the local oscillator carrier frequency. In addition, the microcontroller is also adapted to provide digital control signals to at least some of the plurality of transmitter components to turn on and off different ones of the plurality of transmitter components based on an operating mode of the transmitter, such that the transmitter can accommodate both constant envelope modulation and non-constant envelope modulation schemes.

Programmable transmitter architecture for non-constant and constant envelope modulation

A biasing circuit for use with a Charged Coupled Device (CCD) that creates a gate bias voltage by maintaining a model or surrogate representation of the surface potentials within the CCD storage and barrier regions. In one embodiment the invention is a bias circuit that includes at least a first and second model transistor for modeling the two regions. The first model transistor is connected to a supply voltage to provide a first reference voltage at a first node, and models the first charge storage region. A resistive circuit element is coupled between the first node Nand a second node Nin order to allow a step voltage to be developed. The second model transistor is in turn connected to the second node Nand provides the bias voltage at an output portion that can be used to control the gate of the barrier region. The model circuit therefore allows a proper bias voltage to be maintained through process and operating condition variations.

Gate bias circuit for MOS Charge Coupled Devices

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Somerville, MA, United States of America

Jeff Venuti