International Business Machines Corporation

Other

Jeff Van Tran

Salvatore Nicholas Storino

Robert Russell Williams

Robert J Greiner

Lily Pao Looi

Rupin H Vakharwala

Andrew Douglas Davies

Aimee D Wood

Marcus W Song

Prashanth Nimmala

James A Beavens

In one embodiment, the present invention includes apparatus that is formed on a single semiconductor die having one or more cores, a memory controller, and a hub coupled to the memory controller. The hub includes multiple fabrics each to communicate with a peripheral controller via a target interface and a master interface according to a first protocol, and where the fabrics are serially coupled via a first plurality of target interfaces in an upstream direction and a second plurality of target interfaces in a downstream direction. Other embodiments are described and claimed.

Integrating intellectual property (IP) blocks into a processor

The present invention is an apparatus and method to overcome the unwanted effects of parasitic bipolar discharge in silicon-on-insulator (SOI) field effect transistors (FET) by expanding a stack SOI MOS devices arranged to provide a predetermined logic function. The SOI MOS devices are arranged so as to eliminate electrical connections between certain intermediate nodes of the dynamic logic circuit. Accordingly, eliminating any parasitic bipolar current leakage paths associated with such electrical connections between certain intermediate nodes of said stacked SOI MOS devices of said dynamic circuit.

Method and apparatus for elimination of parasitic bipolar action in logic circuits including complementary oxide semiconductor (CMOS) silicon on insulator (SOI) elements

Method for elimination of parasitic bipolar action in silicon on insulator (SOI) dynamic logic circuits

The present invention is an apparatus and method to overcome the unwanted effects of parasitic bipolar discharge in silicon-on-insulator (SOI) field effect transistors (FET) by eliminating the effects the sneak current discharging path by applying a contention free arrangement methodology to realize the dynamic logic circuit. The SOI MOS devices are arranged so as to eliminate the effects of electrical connections between certain intermediate nodes of the dynamic logic circuit. Accordingly, eliminating any parasitic bipolar current leakage paths associated with such electrical connections between certain intermediate nodes of said stacked SOI MOS devices of said dynamic circuit.

Method and apparatus for elimination of parasitic bipolar action in logic circuits for history removal under stack contention including complementary oxide semiconductor (CMOS) silicon on insulator (SOI) elements

Methods and apparatus are provided for body control in silicon-on-insulator (SOI) domino circuits. The silicon-on-insulator (SOI) domino circuit includes a clock input and an input transistor stack including a plurality of input transistors. Each of the plurality of input transistors receives a data input. An intermediate precharge node is connected to the input transistor stack. An output inverter is connected to the intermediate precharge node. The output inverter includes a pair of silicon-on-insulator (SOI) transistors. A clocked transistor is connected to a body of at least one of the pair of silicon-on-insulator (SOI) transistors. The clocked transistor predischarges the body of the SOI transistor. Another clocked transistor is connected between ground and a body of an evaluate transistor connected to the input transistor stack. The body of the evaluate transistor is predischarged by the clocked transistor.

Method and apparatus for body control in silicon-on-insulator (SOI)

In brief, methods and apparatus are provided for bipolar elimination in silicon-on-insulator (SOI) domino circuits. Apparatus for bipolar elimination in silcon-on-insulator (SOI) domino circuit includes a domino silicon-on-insulator (SOI) field effect transistor. An input is coupled to the domino silicon-n-insulator (SOI) field effect transistor. A predischarging device is coupled to said domino silicon-on-insulator (SOI) field effect transistor. The predischarging device is activated during a precharge mode of the domino circuit, so that the SOI parasitic bipolar transistor is not activated. A dynamic input circuit couples the input to the domino silicon-on-insulator (SOI) field effect transistor. The output of the dynamic input circuit is low during the precharge mode. The output of the dynamic input circuit corresponds to the input during the evaluate mode. The output of the dynamic input circuit is used to gate the predischarging device.

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Rochester, MN, United States of America

Jeff Van Tran