Advanced Micro Devices Corporation

Jeff Shields

Bharath Rangarajan

Khanh Q Tran

Guarionex Morales

Stephen Keetai Park

A fabrication method reduces the amount of discoloration on interlevel dielectric layers due to anti-reflective coatings (ARC). The invention utilizes a barrier layer, such as, silicon nitride (SiN) that prevents the anti-reflective coating from contacting the interlevel dielectric layer (ILD,). The anti-reflective coating can be silicon oxynitride (SiON) deposited by LPCVD or PECVD.

Integrated circuit having double bottom anti-reflective coating layer

Reliable vias are formed by providing an adequate landing area without increasing the size of the underlying feature. Embodiments include forming a lower metal feature with an ARC layer extending beyond the side surfaces of the primary conductive portion serving as an etch stop when forming the through-hole. The overhanging portion provides a suitable landing pad without increasing the size of the underlying feature. Embodiments include ARCs having a thickness ranging from about 1000 .ANG. to about 1300 .ANG. and an overhanging portion extending beyond the side surface of the primary conductive portion up to about 0.05 microns.

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Sunnyvale, CA, United States of America

Jeff Shields