Newport Fab, LLC

Jeff Rose

David J Howard

Michael J DeBar

Arjun Kar-Roy

Integration of active devices with passive components and MEMS devices is disclosed. An integrated semiconductor structure includes an active device having a device top electrode connected to a conductive jumper by a device-side via/interconnect metal stack. The integrated semiconductor structure also includes a passive component having a component bottom plate connected to the conductive jumper by a component side via/interconnect metal stack. The component bottom plate is situated at an intermediate metal level higher than the device top electrode, and the conductive jumper is situated at a connecting metal level higher than the component bottom plate. The conductive jumper reduces undesirable charge flow into the active device during fabrication of the passive component. The passive component can be, for example, a MEMS device.

Integration of active devices with passive components and MEMS devices

Integration of active devices with passive components and MEMS devices is disclosed. An integrated semiconductor structure includes an active device having a device top electrode connected to a conductive jumper by a device-side via/interconnect metal stack. The integrated semiconductor structure also includes a passive component having a component bottom plate connected to the conductive jumper by a component-side via/interconnect metal stack. The component bottom plate is situated at an intermediate metal level higher than the device top electrode, and the conductive jumper is situated at a connecting metal level higher than the component bottom plate. The conductive jumper reduces undesirable charge flow into the active device during fabrication of the passive component. The passive component can be, for example, a MEMS device.

Self-supported MEMS structure and method for its formation are disclosed. An exemplary method includes forming a polymer layer over a MEMS plate over a substrate, forming a trench over the MEMS plate, forming an oxide liner in the trench on sidewalls of the trench, forming a metal liner over the oxide liner in the trench, and depositing a metallic filler in the trench to form a via. The method further includes removing the polymer layer such that the via and the MEMS plate form the self-supported MEMS structure, where the oxide liner provides mechanical rigidity for the metallic filler of the via. An exemplary structure formed by the disclosed method is also disclosed.

Scalable self-supported MEMS structure and related method

A light sensor having a chemically resistant and robust reflector stack is disclosed. The reflector stack is formed over a substrate, and includes an adhesion layer, a patterned reflector layer over the adhesion layer, and a smoothing layer over the patterned reflector layer. The patterned reflector layer has a substantially flat top surface. A conformal passivation layer covers the reflector stack. An absorbing layer is situated above the reflector stack and separated from the reflector stack. The absorbing layer is supported by vias over the substrate. The absorbing layer is connected to at least one resistor, where a resistance of the at least one resistor varies in response to light absorbed by the absorbing layer. The vias are disposed on via landing pads on the substrate.

Light sensor with chemically resistant and robust reflector stack

Self-supported MEMS structure and method for its formation are disclosed. An exemplary method includes forming a polymer layer over a MEMS plate over a substrate, forming a via collar along sidewalls of a first portion of a trench over the polymer layer, and forming a second portion of the trench within the polymer layer. The method also includes forming an oxide liner in the trench lining sidewalls of the via collar and sidewalls of the second portion of the trench, depositing a metallic filler in the trench to form a via, and forming a metal cap layer over the via collar and the metallic filler. The method further includes removing a portion of the metal cap layer to form a via cap, and removing the polymer layer such that the via is supported only on a bottom thereof by the substrate. An exemplary structure formed by the disclosed method is also disclosed.

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Hawthorne, CA, United States of America

Jeff Rose