Stmicroelectronics Gmbh

Stmicroelectronics (research & Development) Limited

Stmicroelectronics (crolles 2) Sas

Stmicroelectronics (grenoble 2) Sas

Jeff Raynor

John Kevin Moore

Neale Dutton

Frederic Lalanne

Pierre Malinge

Duncan Hall

Alexandre Cellier

Mitchell Perley O'Neal

Ed Duncan

The present disclosure is directed to a three-dimensional interactive display system. The system detects a position of a user (e.g., the user's finger or hand) or an optical emitter device, along three different dimensions. In a case where the system detects a position of a user's finger, the user wears a passive device having angled surfaces on his or her finger to improve detection of the user's finger. In a case where the system detects the optical emitter device, the user holds the optical emitter device or wears the optical emitter device similar to the passive device. The optical emitter device emits light, and the system tracks the optical emitting device by detecting the light emitted by the optical emitter device.

Three-dimensional interactive display

The present disclosure relates to an image sensor that includes first and second pixels. One or more transistors of the first pixel share an active region with one or more transistors of the second pixel.

Image sensor pixels having reduced pitch

An imaging device includes a fixed focus lens, an image sensor having an image matrix of a plurality of pixels arranged on a semiconductor substrate and supplying image data, and an electronic circuit for reading the image matrix. The image sensor also includes at least two ambient light sensors arranged on the semiconductor substrate on opposite sides of the image matrix, and configured to capture an ambient light intensity through the fixed lens, and the electronic circuit is also configured to read the two ambient light sensors and to supply ambient light data and the image data.

Imaging device with ambient light sensors

A pixel structure includes two different photosensitive portions. One portion is shielded from incident light and the signals from both are fed into an op amp so that the differential signal is output as the pixel output, thereby cancelling dark current.

Image sensors including a shielded photosensitive portion for noise cancellation and associated methods

The method of processing a first digital image by combining the first digital image with a second digital image includes the first digital image being received from a pixel array, and when receiving the first digital image it is converted into a first continuous sequential data stream. The second digital image may be provided in the form of a second continuous sequential data stream, and the first and second digital images may be combined by continuously combining the data in the first and second data stream.

Method and apparatus for processing image data

A computer navigation device includes a movement sensor and a trigger device activated by a timer. The computer navigation device periodically transmits to a host computer a pre-defined signal corresponding with the signal that would otherwise be generated by the movement sensor on detection of specific movements of the computer navigation device.

Computer mouse for automating input operations

A method is for generating a key from the fixed pattern noise (FPN) of a CMOS image sensor to be used in generating a digital authentication signature. The key may be generated by temporarily disabling the FPN cancellation circuit that is conventionally included in the system, and generating a substantially 'black' image to produce a digitized FPN signal. The key may then be generated from characteristics of the FPN, such as by comparing pairs of pixels, for example.

Method for generating unique image sensor identification, and image sensor system for use therewith

A solid state image sensor has an array of pixels formed on an epitaxial layer on a substrate. Each pixel is relatively large so that it has a high light collecting ability, such as 40&#x2013;60 &#x3bc;m, but the pixel photodiode is relatively small so that it has a low capacitance, such as 4&#x2013;6 &#x3bc;m. Active elements of the pixel photodiode are formed in wells that are spaced away from the pixel photodiode so that the latter is surrounded by epitaxial material.

Large area photodiode

An active pixel image sensor is formed on a P-type epitaxial layer on a P-type substrate. An active pixel array is in the P-type epitaxial layer. Each pixel includes an N-well functioning as a collection node, and a P-well adjacent the N-well. The P-well includes only NMOS transistors functioning as active elements. The in-pixel transistors cooperate with off-pixel PMOS transistors to form A-D converters.

Solid state image sensor

A solid state image sensor includes an array of pixels and a corresponding array of microlenses. The positions of the microlenses relative to their corresponding pixels may vary according to the distances of the pixels from a central optical axis of the image sensor to substantially eliminate vignetting of light collected by the microlenses.

Growing community of inventors

Edinburgh, United Kingdom

Jeff Raynor