Integrated Device Technology, Inc.

Gigoptix, Inc.

Jeff Illgner

James Little

Jonathan Lee Kennedy

Andrea Betti-Berutto

Michael Shaw

Sushil Kumar

Christopher Saint

Shawn Parker

An e-band transceiver includes a transmitter circuit and a receiver circuit. The transmitter circuit includes a surface mounted technology (SMT) module on which is mounted a silicon-germanium (SiGe) bipolar plus CMOS (BiCMOS) converter, a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) output amplifier coupled to the SiGe BiCMOS converter, and a microstrip/waveguide interface coupled to the GaAs pHEMT output amplifier. The receiver circuit of the e-band transceiver includes a receiver-side SMT module on which is mounted a receiver-side SiGe BiCMOS converter, a GaAs pHEMT low noise amplifier coupled to the receiver-side SiGe BiCMOS converter, and a receiver-side microstrip/waveguide interface coupled to the receiver-side GaAs pHEMT low noise amplifier.

BICMOS-based transceiver for millimeter wave frequency applications

GAAS/SIGE-BICMOS-based transceiver system-in-package for E-band frequency applications

A method includes providing an active circuit element in a feedback path between an output node and a bypass node of a charge pump of a Phase Locked Loop (PLL). The bypass node is a node to which a charge current or a discharge current is steered to by the charge pump when neither charging the output node nor discharging the output node is required. The method also includes servoing the bypass node to the output node through the active circuit element in the feedback path to maintain a same voltage at the output node and the bypass node when neither the charging of the output node nor the discharging of the output node is required.

Reducing charge imbalance in a charge pump of a phase locked loop (PLL) through maintaining an output node thereof at a same voltage as a bypass node thereof

Growing community of inventors

Grass Valley, CA, United States of America

Jeff Illgner