Ovonyx Inc.

Jeff Fournier

Tyler A Lowrey

Jon Maimon

Carl Schell

Steve Hudgens

Ed Spall

Wally Czubatyj

Mike Hennessey

Wolodymyr Czubatyj

A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.

Programmable resistance memory

A programmable resistance, chalcogenide, switching or phase-change material device includes a substrate with a plurality of stacked layers including a conducting bottom electrode layer, an insulative layer having an opening formed therein, an active material layer deposited over both the insulative layer, within the opening, and over selected portions of the bottom electrode, and a top electrode layer deposited over the active material layer. The device uses temperature and pressure control methods to increase surface mobility in an active material layer, thus providing complete coverage or fill of the openings in the insulative layer, selected exposed portions of the bottom electrode layer, and the insulative layer.

Temperature and pressure control methods to fill features with programmable resistance and switching devices

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Livonia, MI, United States of America

Jeff Fournier