Honeywell International Inc.

Jeff A Ridley

Daniel W Youngner

Mary Salit

Son Thai Lu

Jeffrey James Kriz

Robert Compton

Robert D Horning

Steven Tin

Kenneth Salit

Linda J Forner

Steven J Eickhoff

Robert E Higashi

Amit Lal

Christopher Kemper Ober

Karl D Nelson

Thomas R Ohnstein

Max C Glenn

Jennifer S Strabley

Bharat B Pant

Serhan Mehmet Ardanuc

Karen Marie Newstrom-Peitso

James C Nohava

Ved Gund

Jane Rekstad

Alex Ruyack

Katherine Camera

Son T Lu

Mary K Salit

Daniel W Younger

Bharat Pant

Jame Rekstad

Embodiments herein provide for a self-destructing chip including at least a first die and a second die. The first die includes an electronic circuit, and the second die is composed of one or more polymers that disintegrates at a first temperature. The second die defines a plurality of chambers, wherein a first subset of the chambers contain a material that reacts with oxygen in an exothermic manner. A second subset of the chambers contain an etchant to etch materials of the first die. In response to a trigger event, the electronic circuit is configured to expose the material in the first subset of chambers to oxygen in order to heat the second die to at least the first temperature, and is configured to release the etchant from the second subset of the chambers to etch the first die.

Self-destructing chip

A self destructing device includes: at least one active electronic region and at least one thermal destruction trigger; at least one chamber enclosed by the semiconducting material, wherein the at least one chamber contains an etchant material, wherein in response to activation of the at least one thermal destruction trigger, the self-destructing device is configured to: generate heat to cause decomposition of at least a first portion of the etchant material; decompose at least a first portion of the etchant material; etch at least a second portion of the second oxide layer provided between the semiconducting material and the at least one chamber at a first temperature; expose the etchant material to the semiconducting material to cause an exothermic reaction generating more heat; enable spread of the exothermic reaction to etch at least a third portion of the first oxide layer and to etch the top layer.

Self-destructing electronic device

Methods, apparatuses, and systems for design, fabrication, and use of an optical bench, as well as alignment and attachment of optical fibers are described herein. One apparatus includes an apparatus body, a first channel within the apparatus body for positioning of a first optical fiber directed along a first axis and a second channel within the apparatus body for positioning of a second optical fiber directed along a second axis, wherein the first axis is orthogonal to the second axis. The apparatus also includes a third optical fiber directed along the second axis and an optical element positioned along the first channel and second channel to focus a first light beam from the first optical fiber along the first axis and focus a second light beam from the second optical fiber along the second axis.

Optical bench

In some examples, a micro-electro-mechanical system (MEMS) optical accelerometer includes a housing comprising an internal chamber that includes a Fabry-Perot cavity and a proof mass affixed to the housing via one or more elastic elements, a light source configured to emit radiation, a first detector configured to receive radiation transmitted through the Fabry-Perot cavity and configured to generate one or more signals that indicate a position of the proof mass. The MEMS optical accelerometer further comprises an atomic wavelength reference and a second detector configured to detect radiation transmitted through the atomic wavelength reference and configured to generate one or more signals that indicate a wavelength of the radiation emitted by the light source, and a servomechanism electrically coupled to the second photo detector and the light source, configured to adjust the light source to maintain the radiation emitted by the light source at approximately a selected wavelength.

Atomic referenced optical accelerometer

In an example, a chip-scale atomic clock physics package is provided. The physics package includes a body defining a cavity having a base surface and one or more side walls. The cavity includes a first step surface and a second step surface defined in the one or more side walls. A first scaffold mounted to the base surface in the cavity. One or more spacers defining an aperture therethrough are mounted to the second step surface in the cavity. A second scaffold is mounted to a first surface of the one or more spacers spans across the aperture of the one or more spacers. A third scaffold is mounted to a second surface of the one or more spacers in the cavity and spans across the aperture of the one or more spacers. Other components of the physics package are mounted to the first, second, and third scaffold.

Vapor cell atomic clock physics package

A method of fabricating vapor cells comprises forming a plurality of vapor cell dies in a first wafer having an interior surface region and a perimeter, and forming a plurality of interconnected vent channels in the first wafer. The vent channels provide at least one pathway for gas from each vapor cell die to travel outside of the perimeter of the first wafer. The method further comprises anodically bonding a second wafer to one side of the first wafer, and anodically bonding a third wafer to an opposing side of the first wafer. The vent channels allow gas toward the interior surface region of the first wafer to be in substantially continuous pressure-equilibrium with gas outside of the perimeter of the first wafer during the anodic bonding of the second and third wafers to the first wafer.

Fabrication techniques to enhance pressure uniformity in anodically bonded vapor cells

A method of fabricating one or more vapor cells comprises forming one or more vapor cell dies in a first wafer having a first diameter, and anodically bonding a second wafer to a first side of the first wafer over the vapor cell dies, the second wafer having a second diameter. A third wafer is positioned over the vapor cell dies on a second side of the first wafer opposite from the second wafer, with the third wafer having a third diameter. A sacrificial wafer is placed over the third wafer, with the sacrificial wafer having a diameter that is larger than the first, second and third diameters. A metallized bond plate is located over the sacrificial wafer. The third wafer is anodically bonded to the second side of the first wafer when a voltage is applied to the metallized bond plate while the sacrificial wafer is in place.

A spectroscopic assembly is provided. The spectroscopic assembly includes a thermal isolation platform, a gas reference cell encasing a gas and attached to the thermal isolation platform, the gas reference cell having at least one optically-transparent window, and at least one heater configured to raise a temperature of the encased gas. When a beamsplitter is configured to reflect a portion of an input optical beam emitted by a laser to be incident on the at least one optically-transparent window of the gas reference cell, the reflected portion of the input optical beam is twice transmitted through the gas. When a detector is configured to receive the optical beam twice transmitted through the gas, a feedback signal is provided to the laser to stabilize the laser.

Simple, low power microsystem for saturation spectroscopy

System and methods for a vacuum cell apparatus for an atomic sensor are provided. In at least one embodiment, the apparatus comprises a cell wall encircling an enclosed volume, the cell wall having a first open end and a second open end opposite from the first open end and a first panel over the first open end of the cell wall and having a first surface, the first surface facing the enclosed volume and having a first set of diffractive optics therein. Further, the apparatus comprises a second panel over the second open end of the cell wall and having a second surface, the second surface facing the enclosed volume and having a second set of diffractive optics therein; wherein the first set of diffractive optics and the second of diffractive optics are configured to reflect at least one optical beam within the enclosed volume along a predetermined optical path.

Folded optics for batch fabricated atomic sensor

In an example, a chip-scale atomic clock physics package is provided. This chip-scale atomic clock physics package includes a body defining a cavity, and a first scaffold mounted in the cavity. A laser is mounted on the first surface of the first scaffold. A second scaffold is also mounted in the cavity. The second scaffold is disposed such that the first surface of the second scaffold is facing the first scaffold. A first photodetector is mounted on the first surface of the second scaffold. A vapor cell is mounted on the first surface of the second scaffold. A waveplate is also included, wherein the laser, waveplate, first photodetector, and vapor cell are disposed such that a beam from the laser can propagate through the waveplate and the vapor cell and be detected by the first photodetector. A lid is also included for covering the cavity.

Devices, methods, and systems for wafer bonding are described herein. One or more embodiments include forming a bond between a first wafer and a second wafer using a first material adjacent the first wafer and a second material adjacent the second wafer. The first material includes a layer of gold (Au) and a layer of indium (In), and the second material includes a layer of Au. Forming the bond between the first wafer and the second wafer includes combining the layer of Au in the first material, the layer of In in the first material, and a portion of the layer of Au in the second material, wherein an additional portion of the layer of Au in the second material is not combined with the layer of Au in the first material and the layer of In in the first material.

Method for wafer bonding using gold and indium

A method to construct a chip-scale atomic clock is provided. The method comprises providing a scaffolding for components in a chip-scale atomic clock. The components include a laser and at least one other component. The method also includes operationally positioning the components on the scaffolding so that an emitting surface of the laser is non-parallel to partially reflective surfaces of the at least one other component.

Processes for stabilizing a VCSEL in a chip-scale atomic clock

Designs and processes for thermally stabilizing a vertical cavity surface emitting laser (vcsel) in a chip-scale atomic clock are provided. In one embodiment, a Chip-Scale Atomic Clock includes: a vertical cavity surface emitting laser (vcsel); a heater block coupled to a base of the vcsel; a photo detector; a vapor cell, wherein the vapor cell includes a chamber that defines at least part of an optical path for laser light between the vcsel and the photo detector; and an iso-thermal cage surrounding the vcsel on all sides, the iso-thermal cage coupled to the heater block via a thermally conductive path.

Designs and processes for thermally stabilizing a vertical cavity surface emitting laser (vcsel) in a chip-scale atomic clock

A chip-scale atomic clock comprises a physics package and a laser die located in a first thermal zone of the physics package. A quarter wave plate is mounted in the physics package and is in optical communication with the laser die. A vapor cell is mounted in the physics package and is in optical communication with the quarter wave plate. The vapor cell is located in a second thermal zone that is independent from the first thermal zone. An optical detector is mounted in the physics package and is in optical communication with the vapor cell. The first thermal zone provides a first operation temperature at a first stability point associated with the laser die, and the second thermal zone provides a second operation temperature at a second stability point associated with the vapor cell.

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Shorewood, MN, United States of America

Jeff A Ridley