Lam Research Corporation

Novellus Systems Incorporated

Jeff A Bogart

Harmeet Singh

Jaroslaw Walery Winniczek

Robert P Chebi

Leonard John Sharpless

Frank Lin

Camelia Rusu

Wan-Lin Chen

Lily Zheng

Stephan Lassig

Cyprian Emeka Uzoh

Bulent Mehmet Basol

John Edward Daugherty

Neil M Benjamin

Vahid Vahedi

Alan Jeffrey Miller

Daniel Arthur Brown

Ian J Kenworthy

Yoko Yamaguchi

David J Cooperberg

Erin McDonnell

Erin Moore

David Cooperberg

A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.

Fabrication of a silicon structure and deep silicon etch with profile control

An upper chamber section of a plasma reaction chamber includes a ceramic window with blind bores in an upper surface for receipt of a thermal couple and a resistance temperature detector, a top chamber interface which comprises an upper surface which vacuum seals against the bottom of the window and a gas injection system comprising 8 side injectors mounted in the sidewall of the top chamber interface and a gas delivery system comprising tubing which provides symmetric gas flow to the 8 injectors from a single gas feed connection.

Replaceable upper chamber parts of plasma processing apparatus

Methods for processing events occurring in a process chamber are provided. In one method, an operation includes carrying gas and receiving an optical signal from the process chamber to an analysis tool that operates in response to the optical signal having a signal-to-noise ratio (SNR) for process analysis. And, dividing the carried gas and optical signal into a plurality of separate gas and optical signals between the process chamber and the analysis tool. The dividing is configured through separate apertures so that the apertures collectively maintain the SNR of the optical signal received at the tool. Methods provide a septum in a second bore dividing the second bore into apertures configured to reduce etching of and deposition on the optical access window and to maintain the desired SNR at the diagnostic end point.

Methods for accessing a process chamber using a dual zone gas injector with improved optical access

An injector provides optical access into a process chamber along an axial path from a diagnostic end point outside the process chamber through an optical access window. A hollow housing body receives first and second process gases, and surrounds the axial path. A sleeve in the body is urged against the body to minimize particle generation, and defines a first gas bore injecting the first process gas into the process chamber. A second gas bore of the sleeve surrounds the axial path for injecting the second process gas into the process chamber, allowing an optical signal to have a desired signal-to-noise ratio (SNR) at the end point. Methods provide a septum in the second bore dividing the second bore into apertures configured to reduce etching of and deposition on the optical access window and to maintain the desired SNR at the diagnostic end point.

Methods of and apparatus for accessing a process chamber using a dual zone gas injector with improved optical access

The present invention includes a mask plate design that includes at least one or a plurality of channels portions on a surface of the mask plate, into which electrolyte solution will accumulate when the mask plate surface is disposed on a surface of wafer, and out of which the electrolyte solution will freely flow. There are also at least one or a plurality of polish portions on the mask plate surface that allow for polishing of the wafer when the mask plate surface is disposed on a surface of wafer.

Mask plate design

Improved methods and apparatus for ion-assisted etch processing in a plasma processing system are disclosed. In accordance with various aspects of the invention, an elevated edge ring, a grooved edge ring, and a RF coupled edge ring are disclosed. The invention operates to improve etch rate uniformity across a substrate (wafer). Etch rate uniformity improvement provided by the invention not only improves fabrication yields but also is cost efficient and does not risk particulate and/or heavy metal contamination.

Techniques for improving etch rate uniformity

Growing community of inventors

Los Gatos, CA, United States of America

Jeff A Bogart