International Business Machines Corporation

Massachusetts Institute of Technology

Globalfoundries Inc.

Bay Zu Precision Co., Ltd

Amorepacific Corporation

Solar Frontier K.k.

Egypt Nanotechnology Center

University of California

Elpis Technologies Inc.

Armonk Business Machines Corporation

Jeehwan Kim

Devendra K Sadana

Keith E Fogel

Augustin J Hong

Joel Pereira De Souza

Kangguo Cheng

Ning Li

Christos Dimitrios Dimitrakopoulos

Hongsik Park

Stephen W Bedell

Brent A Wacaser

Kuen-Ting Shiu

David Brian Mitzi

Byungha Shin

Ramachandra Divakaruni

Ahmed Abou-Kandil

Cheng-Wei Cheng

Oki Gunawan

Talia S Gershon

Mark T Winkler

Juntao Li

Tze-Chiang Chen

Chien-Chih Huang

Bahman Hekmatshoartabari

Jae-Woong Nah

Teodor Krassimirov Todorov

John Albrecht Ott

Yun Seog Lee

Joel P Desouza

Jin-Hong Park

Can Bayram

Marinus Hopstaken

Siegfried Lutz Maurer

Tze-bin Song

Jiyeon Han

Mohamed Saad

Eunjoo Kim

Kyusang Lee

Katherine Lynn Saenger

Solomon Assefa

Richard Alan Haight

Yurii A Vlasov

Shun-Ming Chen

Chien-Yeh Ku

Chuan-Wen Wang

Davood Shahrjerdi

Tayfun Gokmen

Hiroki Sugimoto

Daniel Aneurin Inns

Hisham S Mohamed

Wei Kong

Homare Hiroi

Osama Tobail

Yu-Wei Huang

Chih-Fu Tseng

Han-Wool Yeun

Alexander Reznicek

Ghavam G Shahidi

Dechao Guo

Shu-Jen Han

Jack Oon Chu

Supratik Guha

Dirk Pfeiffer

George Stojan Tulevski

Harold John Hovel

Mahadevaiyer Krishnan

James Bowler Hannon

Christopher Peter D'Emic

Ko-Tao Lee

Alessandro Curioni

Norma Edith Sosa Cortes

Marinus J P Hopstaken

Wanda Andreoni

Haekwang Lee

Woo-Shik Jung

Petr Khomyakov

Hanwool Yeun

Shinhyun Choi

Wencong Liu

Christian Lavoie

Qing Cao

Zhen Zhang

Seyoung Kim

Dirk Robert Englund

Young Min Lee

Ya-Hong Xie

Mark B Ritter

Michael W Geis

Mark Alexander Hollis

James Vichiconti

Ying He

Mostafa M El-Ashry

William S Graham

Paul Michael Kozlowski

Richard J Molnar

Young T Chae

Christopher Heidelberger

Jae-Woong Nahum

Nasser Afify

Han-Wool Yeon

Embodiments relate to a non-invasive electronic device including at least one sensing unit capable of accurately monitoring a user's health condition for a long time such as a few weeks without malfunction while it is worn on the wearer's skin in a non-invasive manner and a method for fabricating the non-invasive electronic device. The non-invasive electronic device includes for example, a skin sensor device.

Non-invasive skin sensor for long-term monitoring and method for fabricating the same

Apparatus, systems, and methods for forming semiconductor materials (e.g., using nanofabrication) are generally described. In one example, a method comprises formation of a carbon buffer layer on a first substrate and a graphene layer on the carbon buffer layer, followed by removing the graphene layer so as to expose the carbon buffer layer and form a fabrication platform, and after removing the graphene layer, forming a first epitaxial layer directly on the carbon buffer layer covalently bonded to the first substrate, wherein the first epitaxial layer comprises a semiconductor. In one example, a method comprises forming an epitaxial layer directly on a carbon buffer layer that is covalently bonded to a substrate, wherein the epitaxial layer comprises a semiconductor, and wherein the carbon buffer layer is a pseudo-graphene layer.

Epitaxial growth using carbon buffer on substrate

A method for forming a pumped laser structure includes forming a III-V buffer layer on a substrate including one of Si or Ge; forming a light emitting diode (LED) on the buffer layer configured to produce a threshold pump power; forming a photonic crystal layer on the LED and depositing a monolayer semiconductor nanocavity laser on the photonic crystal layer for receiving light through the photonic crystal layer from the LED with an optical pump power greater than the threshold pump power, wherein the LED and the laser are formed monolithically and the LED functions as an optical pump for the laser.

Nanocavity monolayer laser monolithically integrated with LED pump

Photovoltaic device with band-stop filter. The photovoltaic device includes an amorphous photovoltaic material and a band-stop filter structure having a stopband extending from a lower limiting angular frequency ω≥0 to an upper limiting angular frequency ωwhere ω>ω. The band-stop filter structure is arranged in the photovoltaic device relative to the photovoltaic material in order to attenuate electromagnetic radiations reaching the photovoltaic material with angular frequencies of ω* in the stopband, so that ω<ω*<ω. The angular frequencies ω* correspond to electronic excitations ℏω* from valence band tail (VBT) states of the amorphous photovoltaic material to conduction band tail (CBT) states of the amorphous photovoltaic material.

Photovoltaic device with band-stop filter

A semiconductor device that includes a fin structure of a type III-V semiconductor material that is substantially free of defects, and has sidewalls that are substantially free of roughness caused by epitaxially growing the type III-V semiconductor material abutting a dielectric material. The semiconductor device further includes a gate structure present on a channel portion of the fin structure; and a source region and a drain region present on opposing sides of the gate structure.

III-V fins by aspect ratio trapping and self-aligned etch to remove rough epitaxy surface

A laser structure including a Si or Ge substrate, a III-V buffer layer formed on the substrate, a light emitting diode (LED) formed on the buffer layer configured to produce visible light, a lens disposed on the LED to focus light from the LED, a photonic crystal layer formed on the LED to receive the light focused by the lens, and a monolayer semiconductor nanocavity laser formed on the photonic crystal layer for receiving light through the photonic crystal layer from the LED. The LED and the laser are formed monolithically and the LED acts as an optical pump for the laser.

Memristors, including memristors comprising a Schottky barrier, and related systems and methods are generally described.

Memristors and related systems and methods

A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a Cu&#x2014;Zn&#x2014;Sn containing chalcogenide material. An emitter layer is formed on the absorber layer and a buffer layer is formed on the emitter layer including an atomic layer deposition (ALD) layer. A transparent conductor layer is formed on the buffer layer.

Atomic layer deposition for photovoltaic devices

A semiconductor device includes an extremely thin semiconductor-on-insulator substrate (ETSOI) having a base substrate, a thin semiconductor layer and a buried dielectric therebetween. A device channel is formed in the thin semiconductor layer. Source and drain regions are formed at opposing positions relative to the device channel. The source and drain regions include an n-type material deposited on the buried dielectric within a thickness of the thin semiconductor layer. A gate structure is formed over the device channel.

Leakage-free implantation-free ETSOI transistors

A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.

Double layered transparent conductive oxide for reduced Schottky barrier in photovoltaic devices

Embodiments of this disclosure include apparatus, systems, and methods for fabricating monolayers. In one example, a method includes forming a multilayer film having a plurality of monolayers of a two-dimensional (2D) material on a growth substrate. The multilayer film has a first side proximate the growth substrate and a second side opposite the first side.

Atomic precision control of wafer-scale two-dimensional materials

A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.

Hybrid CZTSSe photovoltaic device

A semiconductor device includes a monocrystalline substrate configured to form a channel region between two recesses in the substrate. A gate conductor is formed on a passivation layer over the channel region. Dielectric pads are formed in a bottom of the recesses and configured to prevent leakage to the substrate. Source and drain regions are formed in the recesses on the dielectric pads from a deposited non-crystalline n-type material with the source and drain regions making contact with the channel region.

MOSFET with ultra low drain leakage

A photovoltaic device includes an absorber layer having a back contact formed on the absorber layer, the back contact having an exposed surface free from a substrate. It further includes a top contact formed in contact with a transparent conductive layer opposite the back contact and a stressor layer forming a superstrate on the absorber layer opposite the back contact.

Substrate-free thin-film flexible photovoltaic device and fabrication method

Exemplary embodiments relate to a skin-adherable electronic device including a semiconductor circuit unit including a circuit element including an electrode and an interconnect, and a semiconductor device including an insulating layer and an active layer; and a flexible patch that can adhere to skin and including a plurality of through-holes, wherein the insulating layer includes a plurality of through-holes corresponding to the plurality of through-holes of the flexible patch, and a method of manufacturing the same. When the active layer is made of a piezoelectric material, the electronic device may be used as a skin sensor that can acquire skin deformation and/or elasticity information.

Electronic device which can be adhered to skin and method for manufacturing the same

Growing community of inventors

Los Angeles, CA, United States of America

Jeehwan Kim