Samsung Electronics Co., Ltd.

Jee-Yeon Kang

Chang-Hyun Lee

Dong-Hoon Jang

Jung-dal Choi

In method of programming a nonvolatile memory device including first and second cell strings that are coupled to one bitline, a first channel of the first cell string and a second channel of the second cell string are precharged by applying a first voltage to the bitline, one cell string is selected from the first and second cell strings, and a memory cell included in the selected cell string is programmed by applying a second voltage greater than a ground voltage and less than the first voltage to the bitline.

Growing community of inventors

Seongnam-si, South Korea

Jee-Yeon Kang