International Business Machines Corporation

Agency for Science, Technology and Research

Jed Walter Pitera

Kafai Lai

Joy Cheng

Chi-Chun Liu

Michael A Guillorn

Hsinyu Tsai

Daniel Sanders

Charles Thomas Rettner

James L Hedrick

Hsueh-Chung Chen

Wai-Kin Li

Yi Yan Yang

Cheng Chi

Young-Hye Na

Amanda Catherine Engler

Daniel Joseph Coady

Lin Hu

Da Yang

Teddie Peregrino Magbitang

Alshakim Nelson

Richard Anthony Dipietro

Ankit Vora

Hoa D Truong

Daniel James Dechene

Kazuki Fukushima

Kristin Schmidt

Hareem Tariq Maune

Noel Arellano

Shrinivas Venkataraman

Shaoqiong Liu

Shao Qiong Liu

A method for local pattern density control of a device layout used by graphoepitaxy directed self-assembly (DSA) processes includes importing a multi-layer semiconductor device design into an assist feature system and determining overlapping regions between two or more layers in the multi-layer semiconductor device design using at least one Boolean operation. A fill for assist features is generated to provide dimensional consistency of device features by employing the overlapping regions to provide placement of the assist features. An updated device layout is stored in a memory device.

Design-aware pattern density control in directed self-assembly graphoepitaxy process

The disclosure provides methods for directed self-assembly (DSA) of a block co-polymer (BCP). In one embodiment, a method includes: forming an oxide spacer along each of a first sidewall and a second sidewall of a cavity in a semiconductor substrate; forming a neutral layer between the oxide spacers and along a bottom of the cavity; and removing the oxide spacers to expose the first and second sidewalls and a portion of the bottom of the cavity adjacent the first and second sidewalls.

Directed self-assembly

Block copolymers (BCPs) for self-assembly applications comprise a linear fluorinated linking group L' joining a pair of adjacent blocks. A film layer comprising a BCP, which is disposed on an underlayer and in contact with an atmosphere, is capable of forming a perpendicularly oriented domain pattern when the underlayer is preferentially wetted by one domain of an otherwise identical self-assembled BCP in which all fluorines of L&#x2032; are replaced by hydrogen. The BCP can be a low-chi or high-chi BCP. In a preferred embodiment, the BCP comprises a styrene-based first block, and a second block comprises a carbonate and/or ester repeat unit formed by ring opening polymerization of a cyclic carbonate and/or cyclic ester monomer. The linking group L&#x2032; has a lower surface energy than each of the polymer blocks.

Block copolymers for directed self-assembly applications

After formation of a template layer over a neutral polymer layer, a self-assembling block copolymer material is applied and self-assembled. The template layer includes a first linear portion, a second linear portion that is shorter than the first linear portion, and blocking template structures having a greater width than the second linear portion. The self-assembling block copolymer material is phase-separated into alternating lamellae in regions away from the widthwise-extending portion. The blocking template structures perturb, and cause termination of, the lamellae. A cavity parallel to the first and second linear portions and terminating in self-alignment to the blocking template structures is formed upon selective removal of a polymeric block component. The pattern of the cavity can be inverted and transferred into the material layer to form fins having different lengths.

2-dimensional patterning employing tone inverted graphoepitaxy

Methods and computer program products for designing topographic patterns for directing the formation of self-assembled domains at specified locations on substrates. The methods include generating mathematical models that operate on mathematical descriptions of the number and locations of cylindrical self-assembled domains in a mathematical description of a guiding pattern.

Method for designing topographic patterns for directing the formation of self-assembled domains at specified locations on substrates

Cationic, anionic, and/or zwitterionic bis-urea compounds self-assemble by non-covalent interactions in aqueous solution to form high aspect ratio nanofibers. The nanofibers reversibly bind drugs by non-covalent interactions, forming drug compositions for exhibiting sustained release of the drug.

Self-assembling bis-urea compounds for drug delivery

A cationic bis-urea compound is disclosed of formula (1): wherein:

Cationic bis-urea compounds as effective antimicrobial agents

A method and a computer system for designing an optical photomask for forming a prepattern opening in a photoresist layer on a substrate wherein the photoresist layer and the prepattern opening are coated with a self-assembly material that undergoes directed self-assembly to form a directed self-assembly pattern. The methods includes: generating a mask design shape from a target design shape; generating a sub-resolution assist feature design shape based on the mask design shape; using a computer to generate a prepattern shape based on the sub-resolution assist feature design shape; and using a computer to evaluate if a directed self-assembly pattern of the self-assembly material based on the prepattern shape is within specified ranges of dimensional and positional targets of the target design shape on the substrate.

Method for designing optical lithography masks for directed self-assembly

A design layout including shapes of target areas for forming semiconductor fins employing directed self-assembly can be decomposed into guiding patterns and cut patterns. The lengthwise edges of the shapes of target areas are adjusted. Widthwise edges of the adjusted shapes are extended outward to generate diffusion shapes. Guiding pattern shapes are then generated employing the diffusion shapes. Taper edges are adjusted based on process bias of a photoresist material to be subsequently employed. Optionally, a portion of a guiding pattern shape between diffusion shapes may be removed as a connection shape. The guiding pattern shapes can define at least one guiding pattern mask for lithographic pattern of guiding pattern shapes, and cut shapes can be derived from the diffusion shapes and the guiding pattern shapes. The guiding pattern shapes and the cut shapes may be adjusted to accommodate effects at device cell edges and at device macro edges.

Fin design level mask decomposition for directed self assembly

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Portola Valley, CA, United States of America

Jed Walter Pitera