Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Soitec

Commissariat a L'energie Atomique

S.o.i.tec Silicon on Insulator Technologies

Jean-Sebastien Moulet

Lamine Benaissa

Chrystel Deguet

Laurent Clavelier

Franck Fournel

Lea Di Cioccio

Alexandre Reinhardt

Bruno Imbert

Alexis Drouin

Yann Sinquin

Isabelle Huyet

Marion Migette

Nicolas Blanc

Thu Trang Vo

The invention relates to a SAW resonator () comprising at least: a substrate (); a layer () of piezoelectric material arranged on the substrate; a first attenuation layer () arranged between the substrate and the layer of piezoelectric material, and/or, when the substrate comprises at least two different layers (), a second attenuation layer () arranged between the two layers of the substrate; and in which the at least one attenuation layer is/are heterogeneous.

Saw resonator comprising layers for attenuating parasitic waves

A touch surface device, comprising at least:

Touch surface device

A method for manufacturing a nanoscale object from a structure including a strained elastic layer on a foundation in a solid state present at a surface of a rigid substrate, the method reiterating: melting the foundation for a duration higher than or equal to 50 ns, thickness of the foundation being at least 20 nm and lower than a predetermined thickness corresponding to a theoretical peak-to-peak amplitude of wrinkles, the melting generating a simultaneous deformation of the elastic layer and of the foundation and a localized contact between the elastic layer and the rigid substrate insulating the regions from the foundation; solidifying the foundation to bring the foundation back to the solid state; until the foundation reaches yield point of the elastic layer.

Method for manufacturing nanometric objects using the rupture of a layer deformed by wrinkles

A method forming an elastic undulated layer locally lying on a substrate from a structure including a strained elastic layer on a foundation in a solid state present at a surface of a rigid substrate, the method including: melting a foundation for a duration of at least 50 ns, the foundation thickness being at least 20 nm and lower than a predetermined thickness corresponding to a theoretical peak-to-peak amplitude of wrinkles, the melting generating a simultaneous deformation, by forming wrinkles, of the elastic layer and the foundation and accompanied by localized adherent contact between the elastic layer and the rigid substrate in zones separating regions of the foundation; solidifying the foundation to bring it back to the solid state; removing the foundation brought back to the solid state to suspend a layer above the substrate outside the zones of localized adherent contact, the suspended layer being undulated in accordance with the wrinkles.

Method for obtaining a wavy layer locally suspended on a substrate using a deformation by formation of wrinkles

A method of producing a structure made of a piezoelectric material, including: a) production of a stack including at least one metal layer and at least one conductive layer on a substrate made of piezoelectric material, wherein at least one electrical contact is established between the conductive layer and a metal element outside the stack; b) an ionic and/or atomic implantation, through the conductive layer and the metal layer; c) transfer of the substrate onto a transfer substrate, followed by fracturing of the transferred piezoelectric substrate, in an embrittlement area.

Method for implanting a piezoelectric material

A pressure-sensitive sensor including a substrate supporting a piezoelectric layer of a piezoelectric material. The piezoelectric layer includes surface undulations as wrinkles on which pressure is exerted upon use of the sensor. The piezoelectric layer is sandwiched between two electrodes for collecting charges generated by deformation of the piezoelectric layer.

Sensor capable of sensing pressure by means of the deformation of a wrinkled piezoelectric layer

A method of carrying out a transfer of one or more first components or of a first layer onto a second substrate including: a) application and maintaining, by electrostatic effect, of the one or more first components or of the first layer, on a first substrate, made of a ferroelectric material, electrically charged, b) placing in contact, direct or by molecular adhesion, and transfer of the components or the layer onto a second substrate, and c) dismantling of the first substrate, leaving at least one part of the components or the layer on the second substrate.

Method of transfer by means of a ferroelectric substrate

A data storage medium includes a carrier substrate having an electrode layer on the surface thereof and a sensitive material layer extending along the electrode layeradapted to be locally modified between two electrical states by the action of a localized electric field. A reference plane extends globally parallel to the sensitive material layer and is configured to accommodate at least one element for application of an electrostatic field in combination with the electrode layer the electrode layer including a plurality of conductive portions having a dimension at most equal to 100 nm in at least one direction parallel to the reference plane and separated by at least one electrically insulative zone, where at least some of the conductive portions are electrically interconnected, the conductive portions defining data write/read locations within the sensitive material layer.

Growing community of inventors

Chambery, France

Jean-Sebastien Moulet