Stmicroelectronics S.a.

Stmicroelectronics (crolles 2) Sas

Other

Stmicroelectronics (grenoble 2) Sas

Jean-Robert Manouvrier

Jean-Francois Carpentier

Patrick LeMaitre

Charles Baudot

Pascal Fonteneau

Bertrand Borot

Estelle Batail

Xavier Montagner

Frédéric Boeuf

Patrick Le Maitre

Jean-François Carpentier

An electro-optic device may include a photonic chip having an optical grating coupler at a surface. The optical grating coupler may include a first semiconductor layer having a first base and first fingers extending outwardly from the first base. The optical grating coupler may include a second semiconductor layer having a second base and second fingers extending outwardly from the second base and being interdigitated with the first fingers to define semiconductor junction areas, with the first and second fingers having a non-uniform width. The electro-optic device may include a circuit coupled to the optical grating coupler and configured to bias the semiconductor junction areas and change one or more optical characteristics of the optical grating coupler.

Electro-optic device with semiconductor junction area and related methods

An optical modulator uses an optoelectronic phase comparator configured to provide, in the form of an electrical signal, a measure of a phase difference between two optical waves. The phase comparator includes an optical directional coupler having two coupled channels respectively defining two optical inputs for receiving the two optical waves to be compared. Two photodiodes are configured to respectively receive the optical output powers of the two channels of the directional coupler. An electrical circuit is configured to supply, as a measure of the optical phase shift, an electrical signal proportional to the difference between the electrical signals produced by the two photodiodes.

Optical modulator with automatic bias correction

A semiconductor device may include a semiconductor wafer, and a reference circuit carried by the semiconductor wafer. The reference circuit may include optical DUTs, a first set of photodetectors coupled to outputs of the optical DUTs, an optical splitter coupled to inputs of the optical DUTs, and a second set of photodetectors coupled to the optical splitter. The optical splitter is to be coupled to an optical source and configured to transmit a reference optical signal to the first set of photodetectors via the optical DUTs and the second set of photodetectors.

Semiconductor device and wafer with reference circuit and related methods

A semiconductor electro-optical phase shifter may include a substrate, an optical waveguide segment () formed on the substrate, and first and second zones of opposite conductivity types configured to form a first bipolar junction perpendicular to the substrate. The phase shifter may also include a dynamic control structure configured to reverse bias the first junction and a static control structure configured to direct a quiescent current in the second zone, parallel to the first junction.

Pinned dynamic electro-optical phase shifter

An electro-optic (E/O) device includes an asymmetric optical coupler having an input and first and second outputs, a first optical waveguide arm coupled to the first output of the first asymmetric optical coupler, and a second optical waveguide arm coupled to the second output of the first asymmetric optical coupler. At least one E/O amplitude modulator is coupled to at least one of the first and second optical waveguide arms. An optical combiner is coupled to the first and second optical waveguide arms downstream from the at least one E/O amplitude modulator.

Electro-optic (E/O) device with an E/O amplitude modulator and associated methods

A thyristor may include a first optical waveguide segment in a semiconductor material, having first and second complementary longitudinal parts of opposite conductivity types configured to form a longitudinal bipolar junction therebetween. The thyristor may further include a second optical waveguide segment in a semiconductor material, adjacent the first waveguide segment and having first and second complementary longitudinal parts of opposite conductivity types configured to form a longitudinal bipolar junction therebetween. A transverse bipolar junction may be between the second longitudinal portions of the first and second waveguide segments. An electrical insulator may separate each of the first longitudinal portions from the waveguide segment adjacent thereto.

ESD protection thyristor adapted to electro-optical devices

A semiconductor electro-optical phase shifter may include an optical action zone configured to be inserted in an optical waveguide, and a bipolar transistor structure configured so that, in operation, collector current of the bipolar transistor structure crosses the optical action zone perpendicular to the axis of the optical waveguide.

Positive coefficient dynamic electro-optical phase shifter

An optical waveguide in a semiconductor material, may include, between two adjacent portions of the waveguide, a plurality of parallel strips of alternating conductivity types forming a plurality of opposing bipolar junctions between the two adjacent portions.

Optical waveguide to be carried by a semiconductor material including a plurality of parallel strips of alternating conductivity types and related methods

The present disclosure relates to a photodiode comprising: a P-conductivity type substrate region, an electric charge collecting region for collecting electric charges appearing when a rear face of the substrate region receives light, the collecting region comprising an N-conductivity type region formed deep in the substrate region, an N-conductivity type read region formed in the substrate region, and an isolated transfer gate, formed in the substrate region in a deep isolating trench extending opposite a lateral face of the N-conductivity type region, next to the read region, and arranged for receiving a gate voltage to transfer electric charges stored in the collecting region toward the read region.

Vertical gate transistor and pixel structure comprising such a transistor

A method for simulating, in an electrical device simulator, electrical behavior of an integrated diode is described. The diode is modelled using a compact model in the electrical device simulator to determine the electrical behavior of the diode in a given situation. The modelling includes modelling a series resistance relating to the active regions and to the connections, modelling a PN junction of the diode, and modelling a well resistance for positive values of a current passing through the diode involving a conductivity modulation model. The method further includes modelling of the well resistance for negative values of the current by a curve which increases steeply from an initial resistance value corresponding to a zero value of current up to a plateau.

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Echirolles, France

Jean-Robert Manouvrier