Imec

Katholieke Universiteit Leuven, Ku Leuven R&d

Katholieke Universiteit Leuven

Jean-Pierre Celis

Ann Witvrouw

Chris Van Hoof

Jan Fransaer

Anthony Muscat

Raquel Hellin Rico

Raquel Consuelo Hellin Rico

Raquel Consuelo HELLÍN Rico

Anthony Joseph Muscat

One inventive aspect relates to a method for forming hermetically sealed cavities, e.g. semiconductor cavities comprising fragile devices, MEMS or NEMS devices. The method allows forming hermetically sealed cavities at a controlled atmosphere and pressure and at low temperatures, for example, at temperatures not exceeding about 200&#xb0; C. The method further allows forming sealed cavities with short release times, for example, release times of about a few minutes to 30 minutes. The method may, for example, be used for zero level packaging of MEMS or NEMS devices.

Method for forming a hermetically sealed cavity

Manufacturing a semiconductor device involves forming () a sacrificial layer where a micro cavity is to be located, forming () a metal layer of thickness greater than 1 micron over the sacrificial layer, forming () a porous layer from the metal layer, the porous layer having pores of length greater than ten times their breadth, and having a breadth in the range 10 nm-500 nanometers. The pores can be created by anodising, electrodeposition or dealloying. Then the sacrificial layer can be removed () through the porous layer, to form the micro cavity, and pores can be sealed (). Encapsulating MEMS devices with a porous layer can reduce costs by avoiding using photolithography for shaping the access holes since the sacrificial layer is removed through the porous membrane.

Method for encapsulating a device in a microcavity

Growing community of inventors

Korbeek-Lo, Belgium

Jean-Pierre Celis