Stmicroelectronics (Crolles 2) Sas

Stmicroelectronics S.a.

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Jean-Pierre Carrere

Didier Dutartre

Jean-Luc Huguenin

Clement Pribat

Sarah Kuster

Francois Guyader

Jean-Pierre Oddou

Stephane Allegret-Maret

Patrick Gros D'aillon

A first circuit structure of an electronic IC device includes comprises light-sensitive optical circuit components. A second circuit structure of the electronic IC device includes an electronic circuit component and an electrically-conductive layer extending between and at a distance from the optical circuit components and the electronic circuit component. Electrical connections link the optical circuit components and the electronic circuit component. These electrical connections are formed in holes which pass through dielectric layers and the intermediate conductive layer. Electrical insulation rings between the electrical connections and the conductive layer are provided which surround the electrical connections and have a thickness equal to a thickness of the conductive layer.

Electronic IC device comprising integrated optical and electronic circuit component and fabrication method

A silicon on insulator substrate includes a semiconductor bulk handle wafer, an insulating layer on said semiconductor bulk handle wafer and a semiconductor film on said insulating layer. An opening extends completely through the semiconductor film and insulating layer to expose a surface of the semiconductor bulk handle wafer. Epitaxial material fills the opening and extends on said semiconductor film, with the epitaxial material and semiconductor film forming a thick semiconductor film. A trench isolation surrounds a region of the thick semiconductor film to define an electrical contact made to the semiconductor bulk handle wafer through the opening.

Method for forming an electrical contact between a semiconductor film and a bulk handle wafer, and resulting structure

An integrated circuit includes a back side illuminated image sensor formed by a substrate supporting at least one pixel, an interconnect part situated above a front side of the substrate and an anti-reflective layer situated above a back side of the substrate. The anti-reflective layer may be formed of a silicon nitride layer. An additional layer is situated above the anti-reflective layer. The additional layer is formed of one of amorphous silicon nitride or hydrogenated amorphous silicon nitride, in which the ratio of the number of silicon atoms per cubic centimeter to the number of nitrogen atoms per cubic centimeter is greater than 0.7.

Back side illumination image sensor with low dark current

Growing community of inventors

Grenoble, France

Jean-Pierre Carrere