Nxp Usa, Inc.

Jean-Phillippe Laine

Patrice Besse

Rouying Zhan

Changsoo Hong

An electrostatic discharge protection device includes a buried layer having a plurality of heavily doped regions of a first conductivity type and a laterally diffused region between adjacent heavily doped regions, a semiconductor region over the buried layer, and a first well of the first conductivity type extending from a surface of the semiconductor region to a heavily doped region. The device includes a first transistor in the semiconductor region having an emitter coupled to the first terminal, and a second transistor in the semiconductor region having an emitter coupled to the second terminal. The first well forms a collector of the first transistor and a collector of the second transistor.

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Saint Lys, France

Jean-Phillippe Laine