Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Freescale Semiconductor,inc.

Nxp Usa, Inc.

Jean-Philippe Polizzi

Vincent Larrey

Audrey Berthelot

Bernard Diem

Marie-Hélène Vaudaine

Philippe Robert

Xavier Baillin

Hemant D Desai

Jean-Sébastien Danel

Woo Tae Park

Sophie Giroud

Andre Rouzaud

Hemant Desai

André Rouzaud

A device for measuring a characteristic of a fluid includes a sensor comprising a first main face furnished with a sensitive part sensitive to said characteristic and intended to be in contact with the fluid, and a second main face opposite furnished with a first electrical contact element on which a measurement signal is obtained. The device also includes a support comprising a first main face provided with a second electrical contact element linked electrically to the first electrical contact element, a second main face opposite, and an opening passing through the main faces of the support. The device further includes a cap fastened to the second main face of the sensor and delimiting, with this second main face, a cavity closed hermetically facing which is disposed the sensitive part of the sensor; in which the second main face of the sensor is fastened hermetically and/or in a leaktight manner to that of the support at the periphery of the opening, a part of the first electrical contact element being opposite and/or in the opening.

Device for measuring characteristics of a fluid

A pressure sensor to measure low pressures, including: a body extending in a plane, the body including a measurement zone situated at an end of the body, a connection zone situated at another end of the body, the measurement zone including a cavity delimited by a wall, that is deformable under effect of a difference in pressure between inside of the cavity and an external environment, the deformable wall situated at rest in a plane parallel to the plane of the sensor; a mechanism measuring deformation of the deformable wall, the measurement mechanism situated in the cavity; an electrical connection connecting the measurement mechanism to the connection zone, the electrical connection arranged in the body.

Pressure sensor suited to measuring pressure in an aggressive environment

A microsystem and/or nanosystem type device is disclosed, comprising:

Method for making a suspended membrane structure with buried electrode

A microdevice encapsulation structure arranged in at least one cavity formed between a substrate and a cap rigidly attached to the substrate is provided, the cap including one layer of a first material, one face of which forms an inner wall of the cavity, and mechanical reinforcement portions rigidly attached at least to and partly covering said face, having gas absorption and/or adsorption properties, in which the Young's modulus of a second material of the mechanical reinforcement portions is higher than that of the first material, wherein each of said portions includes at least one first layer of the second material, and at least one second layer of a third metallic getter material such that the first layer of the second material is arranged between the layer of the first material and the second layer of the third material and/or is covered by the second layer of the third material.

Encapsulation structure including a mechanically reinforced cap and with a getter effect

A method for producing a device including plural cavities defined between a substrate in at least one given semiconductor material and a membrane resting on a top of insulating posts projecting from the substrate, the method allowing a height of the cavity or cavities to be adapted independently of a height of the insulating posts and allowing cavities of different heights to be formed.

Method for producing a device comprising cavities formed between a suspended element resting on insulating pads semi-buried in a substrate and this substrate

A process is provided for producing at least one interconnecting well to achieve a conductive pathway between at least two connection layers of a component comprising a stack of at least one first substrate and one second substrate which are electrically insulated from one another, the process including defining a surface contact region of a surface connection layer over a surface of the stack and of at least one first contact region embedded in the stack starting from a first embedded connection layer of the first substrate. A region devoid of material is positioned between the first substrate and second substrates and which comprises a stage of producing a interconnecting well which passes through the second substrate and extends between the surface contact region and the first embedded contact region and passes through the region devoid of material, and also a first layer which covers the first embedded connection layer.

Process for producing vertical interconnections through structured layers

A device being a micro-system and/or a nano-system which includes a first substrate, having at least one lower electrode and at least one dielectric layer, and includes an intermediate substrate extending across a main plane of the device and including a moving portion. The intermediate substrate is attached, outside the moving portion, by molecular bonding to the first substrate. The moving portion faces at least a portion of the lower electrode. The device also includes an upper substrate, attached to the intermediate substrate. The moving portion is movable between the lower electrode and the upper substrate. The first, intermediate, and upper substrates extend in a plane parallel to the main plane of the device. The lower electrode detects a component of the movement of the moving portion perpendicular to the plane of the device.

Growing community of inventors

Grenoble, France

Jean-Philippe Polizzi