U.S. Philips Corporation

Jean Philippe Hallais

Michel J Monnier

Guy Michel Jacob

Claude Schemali

Alain Humbert

Jean-Claude Richard

Method of manufacturing gallium nitride crystals by reaction of galium halide and ammonia in which free hydrogen chloride is introduced into the reaction and deposition zones.

Vapor deposition of single crystal gallium nitride

A window for an electron tube formed by a semiconductor device having a support of monocrystalline oxide, by a connection layer formed by a barium- or calcium-boroaluminate, by at least one passivating layer, and by an active layer having a constant composition and formed by a semiconductor material of the p-conductivity type.

Photocathode support of corundum with layer of barium boroaluminate or

A method of epitaxially growing a monocrystalline layer on a substrate that is oxidizable in air in which an epitaxial layer of the oxidizable material is grown on a support of a monocrystalline material having the desired crystalline structure, enough of the support material is then removed to enable removal by etching of the support from the layer of the oxidizable material, the support and attached layer are then introduced into a non-oxidizing atmosphere where the support is etched away from the layer of the oxidizable material and a monocrystalline layer of another material is grown by epitaxial deposition on the exposed surface of the surface of the layer of the oxidizable material exposed by etching.

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Ablon, France

Jean Philippe Hallais